Abstract
In this paper we analyzed, through experiments and 2-D simulations, the behavior under high reverse voltages of a double-diffused MOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching on of the parasitic bipolar structure and in the failure mechanism.
Original language | Undefined |
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Pages (from-to) | 395-405 |
Journal | Microelectronics reliability |
Volume | 2001 |
Issue number | 41 |
DOIs | |
Publication status | Published - 2001 |
Keywords
- METIS-111619
- IR-74524