Investigations on double-diffused MOS transistors under ESD zap conditions

G. Boselli, Stan Meeuwsen, A.J. Mouthaan, F.G. Kuper

    Research output: Contribution to journalArticleAcademicpeer-review

    6 Citations (Scopus)
    2 Downloads (Pure)


    In this paper we analyzed, through experiments and 2-D simulations, the behavior under high reverse voltages of a double-diffused MOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching on of the parasitic bipolar structure and in the failure mechanism.
    Original languageEnglish
    Pages (from-to)395-405
    JournalMicroelectronics reliability
    Issue number41
    Publication statusPublished - 2001


    • METIS-111619
    • IR-74524


    Dive into the research topics of 'Investigations on double-diffused MOS transistors under ESD zap conditions'. Together they form a unique fingerprint.

    Cite this