Investigations on double-diffused MOS transistors under ESD zap conditions

G. Boselli; Stan Meeuwsen; A.J. Mouthaan; F.G. Kuper

doi:10.1016/S0026-2714(00)00240-7

Investigations on double-diffused MOS transistors under ESD zap conditions

G. Boselli, Stan Meeuwsen, A.J. Mouthaan, F.G. Kuper

Research output: Contribution to journal › Article › Academic › peer-review

6 Citations (Scopus)

Abstract

In this paper we analyzed, through experiments and 2-D simulations, the behavior under high reverse voltages of a double-diffused MOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching on of the parasitic bipolar structure and in the failure mechanism.

Original language	English
Pages (from-to)	395-405
Journal	Microelectronics reliability
Volume	2001
Issue number	41
DOIs	https://doi.org/10.1016/S0026-2714(00)00240-7
Publication status	Published - 2001

Keywords

METIS-111619
IR-74524

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10.1016/S0026-2714(00)00240-7

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title = "Investigations on double-diffused MOS transistors under ESD zap conditions",

abstract = "In this paper we analyzed, through experiments and 2-D simulations, the behavior under high reverse voltages of a double-diffused MOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching on of the parasitic bipolar structure and in the failure mechanism.",

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author = "G. Boselli and Stan Meeuwsen and A.J. Mouthaan and F.G. Kuper",

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T1 - Investigations on double-diffused MOS transistors under ESD zap conditions

AU - Boselli, G.

AU - Meeuwsen, Stan

AU - Mouthaan, A.J.

AU - Kuper, F.G.

PY - 2001

Y1 - 2001

N2 - In this paper we analyzed, through experiments and 2-D simulations, the behavior under high reverse voltages of a double-diffused MOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching on of the parasitic bipolar structure and in the failure mechanism.

AB - In this paper we analyzed, through experiments and 2-D simulations, the behavior under high reverse voltages of a double-diffused MOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching on of the parasitic bipolar structure and in the failure mechanism.

KW - METIS-111619

KW - IR-74524

U2 - 10.1016/S0026-2714(00)00240-7

DO - 10.1016/S0026-2714(00)00240-7

M3 - Article

VL - 2001

SP - 395

EP - 405

JO - Microelectronics reliability

JF - Microelectronics reliability

SN - 0026-2714

IS - 41

ER -

Investigations on double-diffused MOS transistors under ESD zap conditions

Abstract

Keywords

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