Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

S. Bruijn; Robbert Wilhelmus Elisabeth van de Kruijs; Andrey Yakshin; Frederik Bijkerk

doi:10.1063/1.3693992

Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

S. Bruijn, Robbert Wilhelmus Elisabeth van de Kruijs, Andrey Yakshin, Frederik Bijkerk

Research output: Contribution to journal › Article › Academic › peer-review

6 Citations (Scopus)

Abstract

We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. © 2012 American Institute of Physics.

Original language	English
Article number	064303
Pages (from-to)	064303-1-064303-5
Number of pages	5
Journal	Journal of Applied Physics
Volume	111
Issue number	6
DOIs	https://doi.org/10.1063/1.3693992
Publication status	Published - 16 Mar 2012

Keywords

IR-81722
METIS-288368

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10.1063/1.3693992

Cite this

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title = "Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures",

abstract = "We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. {\textcopyright} 2012 American Institute of Physics.",

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author = "S. Bruijn and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and Andrey Yakshin and Frederik Bijkerk",

year = "2012",

month = mar,

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doi = "10.1063/1.3693992",

language = "English",

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T1 - Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

AU - Bruijn, S.

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Yakshin, Andrey

AU - Bijkerk, Frederik

PY - 2012/3/16

Y1 - 2012/3/16

N2 - We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. © 2012 American Institute of Physics.

AB - We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. © 2012 American Institute of Physics.

KW - IR-81722

KW - METIS-288368

U2 - 10.1063/1.3693992

DO - 10.1063/1.3693992

M3 - Article

VL - 111

SP - 064303-1-064303-5

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 064303

ER -

Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

Abstract

Keywords

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