We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. © 2012 American Institute of Physics.
|Number of pages||5|
|Journal||Journal of Applied Physics|
|Publication status||Published - 16 Mar 2012|