Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

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6 Citations (Scopus)

Abstract

We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. © 2012 American Institute of Physics.
Original languageEnglish
Article number064303
Pages (from-to)064303-1-064303-5
Number of pages5
JournalJournal of Applied Physics
Volume111
Issue number6
DOIs
Publication statusPublished - 16 Mar 2012

Keywords

  • IR-81722
  • METIS-288368

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