Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

S. Bruijn; R.W.E. van de Kruijs; A. Yakshin; F. Bijkerk

doi:10.1063/1.3693992

Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

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Abstract

We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. © 2012 American Institute of Physics.

Original language	English
Article number	064303
Number of pages	5
Journal	Journal of Applied Physics
Volume	111
Issue number	6
DOIs	https://doi.org/10.1063/1.3693992
Publication status	Published - 16 Mar 2012

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10.1063/1.3693992

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@article{cfa0d9f2a93c42a8b96fb2bc6afea5c0,

title = "Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures",

abstract = "We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. {\textcopyright} 2012 American Institute of Physics.",

keywords = "2023 OA procedure",

author = "S. Bruijn and \{van de Kruijs\}, R.W.E. and A. Yakshin and F. Bijkerk",

year = "2012",

month = mar,

day = "16",

doi = "10.1063/1.3693992",

language = "English",

volume = "111",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

AU - Bruijn, S.

AU - van de Kruijs, R.W.E.

AU - Yakshin, A.

AU - Bijkerk, F.

PY - 2012/3/16

Y1 - 2012/3/16

N2 - We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. © 2012 American Institute of Physics.

AB - We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. © 2012 American Institute of Physics.

KW - 2023 OA procedure

U2 - 10.1063/1.3693992

DO - 10.1063/1.3693992

M3 - Article

SN - 0021-8979

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 064303

ER -

Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

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