Ion beam induced intermixing of interface structures in W/Si multilayers

M. J.H. Kessels*, J. Verhoeven, A. E. Yakshin, F. D. Tichelaar, F. Bijkerk

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)

Abstract

The impact of energetic ions during fabrication of W/Si multilayers may result in interface layers with a gradually changing concentration, notably in the W-on-Si interface layer. This process may be employed to deliberately form a multilayer system with a graded refractive index within each period, in principle allowing an adjustment of the optical, wavelength-selective properties of the multilayer system. We also have given a first demonstration of a new method based on a combination of high-resolution TEM image analysis and grazing incidence X-ray reflectivity analysis to determine the in-depth density profile of a multilayer structure.

Original languageEnglish
Pages (from-to)484-490
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume222
Issue number3-4
DOIs
Publication statusPublished - 1 Aug 2004
Externally publishedYes

Keywords

  • Electron microscopy
  • Evaporation
  • Interfaces
  • Ion bombardment
  • Multilayers
  • Reflectometry
  • Silicon
  • Thin films
  • Tungsten

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