Ion beam induced intermixing of interface structures in W/Si multilayers

M. J.H. Kessels; J. Verhoeven; A. E. Yakshin; F. D. Tichelaar; F. Bijkerk

doi:10.1016/j.nimb.2004.03.006

Ion beam induced intermixing of interface structures in W/Si multilayers

M. J.H. Kessels^*
, J. Verhoeven
, A. E. Yakshin
, F. D. Tichelaar
, F. Bijkerk

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

14 Citations (Scopus)

Abstract

The impact of energetic ions during fabrication of W/Si multilayers may result in interface layers with a gradually changing concentration, notably in the W-on-Si interface layer. This process may be employed to deliberately form a multilayer system with a graded refractive index within each period, in principle allowing an adjustment of the optical, wavelength-selective properties of the multilayer system. We also have given a first demonstration of a new method based on a combination of high-resolution TEM image analysis and grazing incidence X-ray reflectivity analysis to determine the in-depth density profile of a multilayer structure.

Original language	English
Pages (from-to)	484-490
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	222
Issue number	3-4
DOIs	https://doi.org/10.1016/j.nimb.2004.03.006
Publication status	Published - 1 Aug 2004
Externally published	Yes

Keywords

Electron microscopy
Evaporation
Interfaces
Ion bombardment
Multilayers
Reflectometry
Silicon
Thin films
Tungsten

Access to Document

10.1016/j.nimb.2004.03.006

Cite this

@article{faa6942a43014ffda65054d0ada5a946,

title = "Ion beam induced intermixing of interface structures in W/Si multilayers",

abstract = "The impact of energetic ions during fabrication of W/Si multilayers may result in interface layers with a gradually changing concentration, notably in the W-on-Si interface layer. This process may be employed to deliberately form a multilayer system with a graded refractive index within each period, in principle allowing an adjustment of the optical, wavelength-selective properties of the multilayer system. We also have given a first demonstration of a new method based on a combination of high-resolution TEM image analysis and grazing incidence X-ray reflectivity analysis to determine the in-depth density profile of a multilayer structure.",

keywords = "Electron microscopy, Evaporation, Interfaces, Ion bombardment, Multilayers, Reflectometry, Silicon, Thin films, Tungsten",

author = "Kessels, \{M. J.H.\} and J. Verhoeven and Yakshin, \{A. E.\} and Tichelaar, \{F. D.\} and F. Bijkerk",

year = "2004",

month = aug,

day = "1",

doi = "10.1016/j.nimb.2004.03.006",

language = "English",

volume = "222",

pages = "484--490",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Ion beam induced intermixing of interface structures in W/Si multilayers

AU - Kessels, M. J.H.

AU - Verhoeven, J.

AU - Yakshin, A. E.

AU - Tichelaar, F. D.

AU - Bijkerk, F.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - The impact of energetic ions during fabrication of W/Si multilayers may result in interface layers with a gradually changing concentration, notably in the W-on-Si interface layer. This process may be employed to deliberately form a multilayer system with a graded refractive index within each period, in principle allowing an adjustment of the optical, wavelength-selective properties of the multilayer system. We also have given a first demonstration of a new method based on a combination of high-resolution TEM image analysis and grazing incidence X-ray reflectivity analysis to determine the in-depth density profile of a multilayer structure.

AB - The impact of energetic ions during fabrication of W/Si multilayers may result in interface layers with a gradually changing concentration, notably in the W-on-Si interface layer. This process may be employed to deliberately form a multilayer system with a graded refractive index within each period, in principle allowing an adjustment of the optical, wavelength-selective properties of the multilayer system. We also have given a first demonstration of a new method based on a combination of high-resolution TEM image analysis and grazing incidence X-ray reflectivity analysis to determine the in-depth density profile of a multilayer structure.

KW - Electron microscopy

KW - Evaporation

KW - Interfaces

KW - Ion bombardment

KW - Multilayers

KW - Reflectometry

KW - Silicon

KW - Thin films

KW - Tungsten

UR - https://www.scopus.com/pages/publications/3142698421

U2 - 10.1016/j.nimb.2004.03.006

DO - 10.1016/j.nimb.2004.03.006

M3 - Article

AN - SCOPUS:3142698421

SN - 0168-583X

VL - 222

SP - 484

EP - 490

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 3-4

ER -

Ion beam induced intermixing of interface structures in W/Si multilayers

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this