Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon

T. Lohner, M. Fried, J. Gyulai, K. Vedam, N.V. Nguyen, L.J. Hanekamp, A. van Silfhout

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)
122 Downloads (Pure)

Fingerprint

Dive into the research topics of 'Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemistry

Physics & Astronomy