Spectroscopic ellipsometry (SE), high-depth-resolution Rutherford backscattering (RBS) and channeling have been used to examine the surface damage formed by room temperature N and B implantation into silicon. For the analysis of the SE data we used the conventional method of assuming appropriate optical models and fitting the model parameters (layer thicknesses and volume fraction of the amorphous silicon component in the layers) by linear regression. The dependence of the thickness of the surface-damaged silicon layer (beneath the native oxide layer) on the implantation parameters was determined: the higher the dose, the thicker the disordered layer at the surface. The mechanism of the surface amorphization process is explained in relation to the ion beam induced layer-by-layer amorphization. The results demonstrate the applicability of Spectroscopic ellipsometry with a proper optical model. RBS, as an independent cross-checking method supported the constructed optical model.
|Number of pages||5|
|Journal||Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms|
|Publication status||Published - 1994|
|Event||11th International Conference on Ion Beam Analysis, IBA 1993 - Balatonfüred, Hungary|
Duration: 5 Jul 1993 → 9 Jul 1993
Conference number: 11
Lohner, T., Kotai, E., Khanh, N. Q., Toth, L., Fried, M., Vedam, K., ... van Silfhout, A. (1994). Ion-implantation induced anomalous surface amorphization in silicon. Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms, 85(1-4), 335-339. https://doi.org/10.1016/0168-583X(94)95839-4