Ion-Sensitive Gated Bipolar Transistor

R.J.E. Hueting*, S.E.J. Vincent, J.G. Bomer, R.G.P. Sanders, W. Olthuis

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

    3 Downloads (Pure)
    Original languageEnglish
    Pages (from-to)4354-4360
    JournalIEEE transactions on electron devices
    Volume66
    Issue number10
    Early online date2 Sep 2019
    DOIs
    Publication statusPublished - Oct 2019

    Keywords

    • Bipolardevices
    • bipolar junction transistor (BJT)
    • ISFET
    • MOS devices
    • sensor

    Cite this

    @article{eb0a6382cb5643c3887e585acf25d998,
    title = "Ion-Sensitive Gated Bipolar Transistor",
    keywords = "Bipolardevices, bipolar junction transistor (BJT), ISFET, MOS devices, sensor",
    author = "R.J.E. Hueting and S.E.J. Vincent and J.G. Bomer and R.G.P. Sanders and W. Olthuis",
    year = "2019",
    month = "10",
    doi = "10.1109/TED.2019.2933666",
    language = "English",
    volume = "66",
    pages = "4354--4360",
    journal = "IEEE transactions on electron devices",
    issn = "0018-9383",
    publisher = "IEEE",
    number = "10",

    }

    Ion-Sensitive Gated Bipolar Transistor. / Hueting, R.J.E.; Vincent, S.E.J.; Bomer, J.G.; Sanders, R.G.P.; Olthuis, W.

    In: IEEE transactions on electron devices, Vol. 66, No. 10, 10.2019, p. 4354-4360.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Ion-Sensitive Gated Bipolar Transistor

    AU - Hueting, R.J.E.

    AU - Vincent, S.E.J.

    AU - Bomer, J.G.

    AU - Sanders, R.G.P.

    AU - Olthuis, W.

    PY - 2019/10

    Y1 - 2019/10

    KW - Bipolardevices

    KW - bipolar junction transistor (BJT)

    KW - ISFET

    KW - MOS devices

    KW - sensor

    U2 - 10.1109/TED.2019.2933666

    DO - 10.1109/TED.2019.2933666

    M3 - Article

    VL - 66

    SP - 4354

    EP - 4360

    JO - IEEE transactions on electron devices

    JF - IEEE transactions on electron devices

    SN - 0018-9383

    IS - 10

    ER -