Ion-Sensitive Gated Bipolar Transistor

R.J.E. Hueting*, S.E.J. Vincent, J.G. Bomer, R.G.P. Sanders, W. Olthuis

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

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    Abstract

    In this article, we study the ion-sensitive gated bipolar transistor (ISBiT) by forward biasing the source-body diode of the ion-sensitive field-effect transistor (ISFET). Based on theory, extensive TCAD device simulations, and experiments, it is shown that the ISBiT operates at lower gate-voltages with a higher transconductance ( g_m ) than the ISFET both in subthreshold and near-threshold modes. In addition, overall maximum g_m 's have been obtained for the former when operating in saturation mode. However, in the linear superthreshold operation mode, the ISBiT shows lower g_m 's because of the field-induced mobility reduction. The same trends have been obtained for the pH-sensitivity expressed as partial I_text D/partial text pH , since it is linearly dependent on the g_m , as predicted by the theory. Basically, the ISBiT offers more tunability, hence, freedom in the sensor system.

    Original languageEnglish
    Article number8822594
    Pages (from-to)4354-4360
    Number of pages7
    JournalIEEE transactions on electron devices
    Volume66
    Issue number10
    Early online date2 Sep 2019
    DOIs
    Publication statusPublished - Oct 2019

    Keywords

    • Bipolardevices
    • bipolar junction transistor (BJT)
    • ISFET
    • MOS devices
    • sensor

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