Ion-step method for surface potential sensing of silicon nanowires

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Downloads (Pure)

    Abstract

    This paper presents a stimulus-response method for surface potential sensing of silicon nanowire field-effect transistors (Si-NW FETs). When an ‘ion-step’ from low to high ionic strength is given as stimulus to the surface, a change of current through the Si-NWs is measured. When the surface potential is changed from negative for a bare SiO2 surface to neutral/positive when there is poly-L-lysine adsorption, this change is measured by a change in current variation at the ion-step.
    Original languageUndefined
    Title of host publicationThe 19th International Conference on Miniaturized Systems for Chemistry and Life Sciences, μTAS 2015
    PublisherThe Chemical and Biological Microsystems Society
    Pages1731-1733
    Number of pages3
    ISBN (Print)978-0-9798064-8-3
    Publication statusPublished - 25 Oct 2015
    Event19th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2015 - Hwabaek International Convention Center (HICO), Gyeongju, Korea, Republic of
    Duration: 25 Oct 201529 Oct 2015
    Conference number: 19
    http://www.rsc.org/images/LOC/2015/PDFs/Copyrite.pdf

    Publication series

    NameProceedings International Conference on Miniaturized Systems for Chemistry and Life Sciences, μTAS
    PublisherChemical and Biological Microsystems Society
    ISSN (Print)1556-5904

    Conference

    Conference19th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2015
    Abbreviated titleMicroTas 2015
    Country/TerritoryKorea, Republic of
    CityGyeongju
    Period25/10/1529/10/15
    Internet address

    Keywords

    • EWI-26557
    • IR-98706
    • METIS-315091

    Cite this