IR antireflective filtering for EUV multilayer Bragg reflectors

Viacheslav Medvedev, Andrey Yakshin, Robbert Wilhelmus Elisabeth van de Kruijs, V.M. Krivtsun, A.M. Yakunin, K. Koshelev, Frederik Bijkerk

Research output: Contribution to conferencePoster

Abstract

An extreme ultraviolet (EUV) multilayer mirror with an integrated spectral filter for the infrared (IR) range is presented and experimentally evaluated. The design of the antireflective (AR) coating, based on a 10 nm Mo layer and an EUV reflecting and IR transparent B4C/Si multilayer, is significantly simpler than alternatively proposed designs and requires no thick AR layers that may lead to roughness induced EUV performance loss issues. The design has no inherent trade-off between EUV reflectance and IR suppression, maximizing EUV performance. First experimental data shows IR suppression by more than a factor of 150 at a wavelength of 10.6 mm (Fig. 1), with an EUV reflectance of 45%. The AR coating allows high suppression over a large angular acceptance range. Therefore such a mirror could replace conventional multilayer mirrors to suppress undesired spectral components in EUV sources for lithographyAn extreme ultraviolet (EUV) multilayer mirror with an integrated spectral filter for the infrared (IR) range is presented and experimentally evaluated. The design of the antireflective (AR) coating, based on a 10 nm Mo layer and an EUV reflecting and IR transparent B4C/Si multilayer, is significantly simpler than alternatively proposed designs and requires no thick AR layers that may lead to roughness induced EUV performance loss issues. The design has no inherent trade-off between EUV reflectance and IR suppression, maximizing EUV performance. First experimental data shows IR suppression by more than a factor of 150 at a wavelength of 10.6 mm (Fig. 1), with an EUV reflectance of 45%. The AR coating allows high suppression over a large angular acceptance range. Therefore such a mirror could replace conventional multilayer mirrors to suppress undesired spectral components in EUV sources for lithography
Original languageEnglish
Pages-
Publication statusPublished - 21 Jun 2012
Event13th ASML Technology Conference 2012 - Hotel NH Eindhoven Conference Centre Koningshof, Eindhoven, Netherlands
Duration: 21 Jun 201221 Jun 2012
Conference number: 13

Conference

Conference13th ASML Technology Conference 2012
CountryNetherlands
CityEindhoven
Period21/06/1221/06/12

Keywords

  • METIS-298891

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