Issues of laser plasma sources for soft x-ray projection lithography

L. Shmaenok; F. Bijkerk; E. Louis; A. van Honk; M. J. van der Wiel; Yu Platonov; A. Shevelko; A. Mitrofanov; H. Frowein; B. Nicolaus; F. Voß; R. Désor

doi:10.1016/0167-9317(94)90139-2

Issues of laser plasma sources for soft x-ray projection lithography

L. Shmaenok^*, F. Bijkerk, E. Louis, A. van Honk, M. J. van der Wiel, Yu Platonov, A. Shevelko, A. Mitrofanov, H. Frowein, B. Nicolaus, F. Voß, R. Désor

^*Corresponding author for this work

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Abstract

Results of optimization of an excimer laser-induced plasma x-ray source for projection lithography in the range λ = 13-15 nm are reported. A conversion efficiency of >0.7% in 2% BW has been achieved with high-Z target materials. Two methods of reducing contamination of optical elements by target debris have been tested: usage of a thin target layer (for Ta 1 μm was found to be optimal) and of a heavy buffer gas. The effect of the use of Ta-tape target and Kr buffer gas has been measured by determining the reflectivity of a Mo-Si multilayer sample after 10⁵ shots.

Original language	English
Pages (from-to)	211-214
Number of pages	4
Journal	Microelectronic engineering
Volume	23
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(94)90139-2
Publication status	Published - 1 Jan 1994
Externally published	Yes

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title = "Issues of laser plasma sources for soft x-ray projection lithography",

abstract = "Results of optimization of an excimer laser-induced plasma x-ray source for projection lithography in the range λ = 13-15 nm are reported. A conversion efficiency of >0.7% in 2% BW has been achieved with high-Z target materials. Two methods of reducing contamination of optical elements by target debris have been tested: usage of a thin target layer (for Ta 1 μm was found to be optimal) and of a heavy buffer gas. The effect of the use of Ta-tape target and Kr buffer gas has been measured by determining the reflectivity of a Mo-Si multilayer sample after 105 shots.",

author = "L. Shmaenok and F. Bijkerk and E. Louis and {van Honk}, A. and {van der Wiel}, {M. J.} and Yu Platonov and A. Shevelko and A. Mitrofanov and H. Frowein and B. Nicolaus and F. Vo{\ss} and R. D{\'e}sor",

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doi = "10.1016/0167-9317(94)90139-2",

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T1 - Issues of laser plasma sources for soft x-ray projection lithography

AU - Shmaenok, L.

AU - Bijkerk, F.

AU - Louis, E.

AU - van Honk, A.

AU - van der Wiel, M. J.

AU - Platonov, Yu

AU - Shevelko, A.

AU - Mitrofanov, A.

AU - Frowein, H.

AU - Nicolaus, B.

AU - Voß, F.

AU - Désor, R.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Results of optimization of an excimer laser-induced plasma x-ray source for projection lithography in the range λ = 13-15 nm are reported. A conversion efficiency of >0.7% in 2% BW has been achieved with high-Z target materials. Two methods of reducing contamination of optical elements by target debris have been tested: usage of a thin target layer (for Ta 1 μm was found to be optimal) and of a heavy buffer gas. The effect of the use of Ta-tape target and Kr buffer gas has been measured by determining the reflectivity of a Mo-Si multilayer sample after 105 shots.

AB - Results of optimization of an excimer laser-induced plasma x-ray source for projection lithography in the range λ = 13-15 nm are reported. A conversion efficiency of >0.7% in 2% BW has been achieved with high-Z target materials. Two methods of reducing contamination of optical elements by target debris have been tested: usage of a thin target layer (for Ta 1 μm was found to be optimal) and of a heavy buffer gas. The effect of the use of Ta-tape target and Kr buffer gas has been measured by determining the reflectivity of a Mo-Si multilayer sample after 105 shots.

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U2 - 10.1016/0167-9317(94)90139-2

DO - 10.1016/0167-9317(94)90139-2

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VL - 23

SP - 211

EP - 214

JO - Microelectronic engineering

JF - Microelectronic engineering

IS - 1-4

ER -

Issues of laser plasma sources for soft x-ray projection lithography

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