Abstract
Results of optimization of an excimer laser-induced plasma x-ray source for projection lithography in the range λ = 13-15 nm are reported. A conversion efficiency of >0.7% in 2% BW has been achieved with high-Z target materials. Two methods of reducing contamination of optical elements by target debris have been tested: usage of a thin target layer (for Ta 1 μm was found to be optimal) and of a heavy buffer gas. The effect of the use of Ta-tape target and Kr buffer gas has been measured by determining the reflectivity of a Mo-Si multilayer sample after 105 shots.
Original language | English |
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Pages (from-to) | 211-214 |
Number of pages | 4 |
Journal | Microelectronic engineering |
Volume | 23 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1 Jan 1994 |
Externally published | Yes |