Josephson Effect and Charge Distribution in Thin Bi2Te3 Topological Insulators

Martin P. Stehno, Prosper Ngabonziza*, Hiroaki Myoren, Alexander Brinkman

*Corresponding author for this work

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Abstract

Thin layers of topological insulator materials are quasi-2D systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, the Josephson effect, magnetotransport, and weak anti-localization are studied in bottom-gated thin Bi2Te3 topological insulator films. The experimental carrier densities are compared to a model based on the solutions of the self-consistent Schrödinger–Poisson equations and they are in excellent agreement. The modeling allows for a quantitative interpretation of the weak antilocalization correction to the conduction and of the critical current of Josephson junctions with weak links made from such films without any ad hoc assumptions.

Original languageEnglish
Article number1908351
JournalAdvanced materials
Volume32
Issue number14
Early online date24 Feb 2020
DOIs
Publication statusPublished - 9 Apr 2020

Keywords

  • UT-Hybrid-D
  • diffusive transport
  • Josephson junctions
  • superconductivity
  • topological insulators
  • bismuth telluride

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