Josephson Effect in a Few-Hole Quantum Dot

Joost Ridderbos, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Erik P.A.M. Bakkers, Alexander Brinkman, Floris A. Zwanenburg (Corresponding Author)

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

A Ge–Si core–shell nanowire is used to realize a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions.

Original languageEnglish
Article number1802257
JournalAdvanced materials
Volume30
Issue number44
Early online date10 Sep 2018
DOIs
Publication statusPublished - 2 Nov 2018

Fingerprint

Semiconductor quantum dots
Nanowires
Fermions
Field effect transistors
Physics
Electric fields

Keywords

  • UT-Hybrid-D
  • superconductor–semiconductor hybrids
  • silicon quantum electronics

Cite this

Ridderbos, J., Brauns, M., Shen, J., de Vries, F. K., Li, A., Bakkers, E. P. A. M., ... Zwanenburg, F. A. (2018). Josephson Effect in a Few-Hole Quantum Dot. Advanced materials, 30(44), [1802257]. https://doi.org/10.1002/adma.201802257
Ridderbos, Joost ; Brauns, Matthias ; Shen, Jie ; de Vries, Folkert K. ; Li, Ang ; Bakkers, Erik P.A.M. ; Brinkman, Alexander ; Zwanenburg, Floris A. / Josephson Effect in a Few-Hole Quantum Dot. In: Advanced materials. 2018 ; Vol. 30, No. 44.
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Ridderbos, J, Brauns, M, Shen, J, de Vries, FK, Li, A, Bakkers, EPAM, Brinkman, A & Zwanenburg, FA 2018, 'Josephson Effect in a Few-Hole Quantum Dot' Advanced materials, vol. 30, no. 44, 1802257. https://doi.org/10.1002/adma.201802257

Josephson Effect in a Few-Hole Quantum Dot. / Ridderbos, Joost; Brauns, Matthias; Shen, Jie; de Vries, Folkert K.; Li, Ang; Bakkers, Erik P.A.M.; Brinkman, Alexander; Zwanenburg, Floris A. (Corresponding Author).

In: Advanced materials, Vol. 30, No. 44, 1802257, 02.11.2018.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Bakkers, Erik P.A.M.

AU - Brinkman, Alexander

AU - Zwanenburg, Floris A.

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AB - A Ge–Si core–shell nanowire is used to realize a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions.

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Ridderbos J, Brauns M, Shen J, de Vries FK, Li A, Bakkers EPAM et al. Josephson Effect in a Few-Hole Quantum Dot. Advanced materials. 2018 Nov 2;30(44). 1802257. https://doi.org/10.1002/adma.201802257