Kelvin probe study of laterally inhomogeneous dielectric charging and charge diffusion in RF MEMS capacitive switches

R.W. Herfst, P.G. Steeneken, J. Schmitz, A.J.G. Mank, M. van Gils

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    48 Citations (Scopus)
    21 Downloads (Pure)

    Abstract

    In this paper we use Scanning Kelvin Probe Microscopy (SKPM) to detect charge in the dielectric of RF MEMS capacitive switches. We observe a laterally inhomogeneous distribution. Laterally inhomogeneous dielectric charging leads to a narrowing of the C-V curve [1], and can lead to stiction of the membrane. The measurements show that trapped charges slowly diffuse, which reduces the inhomogeneity and shows that charge is vertically confined. From these measurements we estimate the lateral diffusion coefficient of trapped charges.
    Original languageEnglish
    Title of host publication2008 IEEE International Reliability Physics Symposium proceedings
    Subtitle of host publication46th annual : Phoenix, Arizona, April 27-May 1, 2008
    Place of PublicationPiscataway, NJ
    PublisherIEEE Computer Society
    Pages492-496
    Number of pages5
    ISBN (Print)978-1-4244-2050-6
    DOIs
    Publication statusPublished - 29 Mar 2008
    Event46th Annual IEEE International Reliability Physics Symposium, IRPS 2008 - Phoenix, United States
    Duration: 27 Apr 20081 May 2008
    Conference number: 46

    Conference

    Conference46th Annual IEEE International Reliability Physics Symposium, IRPS 2008
    Abbreviated titleIRPS
    CountryUnited States
    CityPhoenix
    Period27/04/081/05/08

    Keywords

    • SC-ICRY: Integrated Circuit Reliability and Yield
    • METIS-251073
    • EWI-13052
    • IR-60169

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