Kelvin test structure for measuring contact resistance of shallow junctions

L. K. Nanver*, E. J G Goudena, J. Slabbekoorn

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)

Abstract

A Kelvin contact resistance test structure has been developed for accurate and direct measurement of highly-doped, shallow n+ and p+ junctions, which may be self-aligned to the contact window. The structure is easily integrated in many IC-processes. Results are presented for high-dose arsenic implantations, where excimer laser annealing of the contact windows yields contact resistivities below 10-7 Ωcm2.

Original languageEnglish
Title of host publicationProceedings of International Conference on Microelectronic Test Structures
PublisherIEEE
Pages241-245
Number of pages5
ISBN (Print)0-7803-2783-7
DOIs
Publication statusPublished - 1 Jan 1996
Externally publishedYes
EventIEEE International Conference on Microelectronic Test Structures 1996 - Trento, Italy
Duration: 25 Mar 199628 Mar 1996
http://www.homepages.ed.ac.uk/ajw/ICMTS/prog96.html

Conference

ConferenceIEEE International Conference on Microelectronic Test Structures 1996
Abbreviated titleICMTS 1996
CountryItaly
CityTrento
Period25/03/9628/03/96
Internet address

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  • Cite this

    Nanver, L. K., Goudena, E. J. G., & Slabbekoorn, J. (1996). Kelvin test structure for measuring contact resistance of shallow junctions. In Proceedings of International Conference on Microelectronic Test Structures (pp. 241-245). IEEE. https://doi.org/10.1109/ICMTS.1996.535654