Kelvin test structure for measuring contact resistance of shallow junctions

L. K. Nanver; E. J G Goudena; J. Slabbekoorn

doi:10.1109/ICMTS.1996.535654

Kelvin test structure for measuring contact resistance of shallow junctions

L. K. Nanver^*, E. J G Goudena, J. Slabbekoorn

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

9 Citations (Scopus)

Abstract

A Kelvin contact resistance test structure has been developed for accurate and direct measurement of highly-doped, shallow n⁺ and p⁺ junctions, which may be self-aligned to the contact window. The structure is easily integrated in many IC-processes. Results are presented for high-dose arsenic implantations, where excimer laser annealing of the contact windows yields contact resistivities below 10^-7 Ωcm².

Original language	English
Title of host publication	Proceedings of International Conference on Microelectronic Test Structures
Publisher	IEEE
Pages	241-245
Number of pages	5
ISBN (Print)	0-7803-2783-7
DOIs	https://doi.org/10.1109/ICMTS.1996.535654
Publication status	Published - 1 Jan 1996
Externally published	Yes
Event	IEEE International Conference on Microelectronic Test Structures 1996 - Trento, Italy Duration: 25 Mar 1996 → 28 Mar 1996 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog96.html

Conference

Conference	IEEE International Conference on Microelectronic Test Structures 1996
Abbreviated title	ICMTS 1996
Country/Territory	Italy
City	Trento
Period	25/03/96 → 28/03/96
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog96.html

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10.1109/ICMTS.1996.535654

Cite this

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title = "Kelvin test structure for measuring contact resistance of shallow junctions",

abstract = "A Kelvin contact resistance test structure has been developed for accurate and direct measurement of highly-doped, shallow n+ and p+ junctions, which may be self-aligned to the contact window. The structure is easily integrated in many IC-processes. Results are presented for high-dose arsenic implantations, where excimer laser annealing of the contact windows yields contact resistivities below 10-7 Ωcm2.",

author = "Nanver, {L. K.} and Goudena, {E. J G} and J. Slabbekoorn",

year = "1996",

month = jan,

day = "1",

doi = "10.1109/ICMTS.1996.535654",

language = "English",

isbn = "0-7803-2783-7",

pages = "241--245",

booktitle = "Proceedings of International Conference on Microelectronic Test Structures",

publisher = "IEEE",

note = "IEEE International Conference on Microelectronic Test Structures 1996, ICMTS 1996 ; Conference date: 25-03-1996 Through 28-03-1996",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/prog96.html",

}

TY - GEN

T1 - Kelvin test structure for measuring contact resistance of shallow junctions

AU - Nanver, L. K.

AU - Goudena, E. J G

AU - Slabbekoorn, J.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A Kelvin contact resistance test structure has been developed for accurate and direct measurement of highly-doped, shallow n+ and p+ junctions, which may be self-aligned to the contact window. The structure is easily integrated in many IC-processes. Results are presented for high-dose arsenic implantations, where excimer laser annealing of the contact windows yields contact resistivities below 10-7 Ωcm2.

AB - A Kelvin contact resistance test structure has been developed for accurate and direct measurement of highly-doped, shallow n+ and p+ junctions, which may be self-aligned to the contact window. The structure is easily integrated in many IC-processes. Results are presented for high-dose arsenic implantations, where excimer laser annealing of the contact windows yields contact resistivities below 10-7 Ωcm2.

U2 - 10.1109/ICMTS.1996.535654

DO - 10.1109/ICMTS.1996.535654

M3 - Conference contribution

AN - SCOPUS:0029709548

SN - 0-7803-2783-7

SP - 241

EP - 245

BT - Proceedings of International Conference on Microelectronic Test Structures

PB - IEEE

T2 - IEEE International Conference on Microelectronic Test Structures 1996

Y2 - 25 March 1996 through 28 March 1996

ER -

Kelvin test structure for measuring contact resistance of shallow junctions

Abstract

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