Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from SiH4 and GeH4

J. Holleman, A.E.T. Kuiper, J.F. Verweij, J.F. Verweij

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Abstract

A Langmuir-Hinshelwood growth-rate equation is presented for the germanium-silicon (GeSi) alloy deposition fromGeH4 and SiH4 assuming dissociative chemisorption on a heterogeneous GeSi surface. Model parameters for the depositionkinetics have been extracted from measurements. The fit for the bond-energy of hydrogen to a germanium surface site is30 kJ mol–1, lower compared to that of hydrogen to a silicon site. We found to a good approximation the GeSi compositionof the alloy to be independent of the temperature. Moreover, the GeSi is polycrystalline down to the lowest depositiontemperature we used, ie., 450°C
Original languageUndefined
Pages (from-to)1717-1722
JournalJournal of the Electrochemical Society
Volume140
Issue number6
DOIs
Publication statusPublished - 2005

Keywords

  • METIS-112068
  • IR-61615

Cite this

Holleman, J. ; Kuiper, A.E.T. ; Verweij, J.F. ; Verweij, J.F. / Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from SiH4 and GeH4. In: Journal of the Electrochemical Society. 2005 ; Vol. 140, No. 6. pp. 1717-1722.
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Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from SiH4 and GeH4. / Holleman, J.; Kuiper, A.E.T.; Verweij, J.F.; Verweij, J.F.

In: Journal of the Electrochemical Society, Vol. 140, No. 6, 2005, p. 1717-1722.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from SiH4 and GeH4

AU - Holleman, J.

AU - Kuiper, A.E.T.

AU - Verweij, J.F.

AU - Verweij, J.F.

PY - 2005

Y1 - 2005

N2 - A Langmuir-Hinshelwood growth-rate equation is presented for the germanium-silicon (GeSi) alloy deposition fromGeH4 and SiH4 assuming dissociative chemisorption on a heterogeneous GeSi surface. Model parameters for the depositionkinetics have been extracted from measurements. The fit for the bond-energy of hydrogen to a germanium surface site is30 kJ mol–1, lower compared to that of hydrogen to a silicon site. We found to a good approximation the GeSi compositionof the alloy to be independent of the temperature. Moreover, the GeSi is polycrystalline down to the lowest depositiontemperature we used, ie., 450°C

AB - A Langmuir-Hinshelwood growth-rate equation is presented for the germanium-silicon (GeSi) alloy deposition fromGeH4 and SiH4 assuming dissociative chemisorption on a heterogeneous GeSi surface. Model parameters for the depositionkinetics have been extracted from measurements. The fit for the bond-energy of hydrogen to a germanium surface site is30 kJ mol–1, lower compared to that of hydrogen to a silicon site. We found to a good approximation the GeSi compositionof the alloy to be independent of the temperature. Moreover, the GeSi is polycrystalline down to the lowest depositiontemperature we used, ie., 450°C

KW - METIS-112068

KW - IR-61615

U2 - 10.1149/1.2221630

DO - 10.1149/1.2221630

M3 - Article

VL - 140

SP - 1717

EP - 1722

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

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