Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from SiH4 and GeH4

J. Holleman, A.E.T. Kuiper, J.F. Verweij, J.F. Verweij

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    A Langmuir-Hinshelwood growth-rate equation is presented for the germanium-silicon (GeSi) alloy deposition fromGeH4 and SiH4 assuming dissociative chemisorption on a heterogeneous GeSi surface. Model parameters for the depositionkinetics have been extracted from measurements. The fit for the bond-energy of hydrogen to a germanium surface site is30 kJ mol–1, lower compared to that of hydrogen to a silicon site. We found to a good approximation the GeSi compositionof the alloy to be independent of the temperature. Moreover, the GeSi is polycrystalline down to the lowest depositiontemperature we used, ie., 450°C
    Original languageUndefined
    Pages (from-to)1717-1722
    JournalJournal of the Electrochemical Society
    Issue number6
    Publication statusPublished - 2005


    • METIS-112068
    • IR-61615

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