Abstract
This research presents the fabrication of all-oxide LaNiO3/Pb(Zr,Ti)O3/LaNiO3 thin films for
applications in piezoelectric microelectromechanical systems (piezoMEMS). All oxide layers are
fabricated on 4-inch silicon-on-insulator (SOI) wafer using large-area pulsed laser deposition (PLD)
by SolMateS B.V. The determined film-thickness variation is less than 5% over the total wafer area.
PZT thin-film of 1-μm-thick exhibits (100) texture orientation.
The optimization of the electromechanical responses for piezoelectric membranes is investigated
experimentally. In the optimization of membrane- and electrode-geometries, Pb(Zr,Ti)O3 (PZT)
actuators consisting of a variety of membrane type, membrane diameter and electrode coverage are
fabricated using microfabrication processes and characterized by laser Doppler interferometer for
piezoelectric responses, like displacement and resonance frequency.
The fabricated 500-μm-diameter PZT membrane provides high central displacement of 26 nm/V at a
constant frequency well below its first resonance frequency (fr = 330 kHz). The results also indicated
that the membrane diameter has a dominant effect on the magnitude of the out-of-plane displacement
and the resonance frequency. The electrode-size to membrane-diameter ratio or electrode coverage is
important and may be tailored to optimize the displacement. Electrode coverage of 36% produces the
optimum displacement. Moreover, it shows an excellent long-term stability of membrane actuators
with a displacement remains of about 95% after 10 billion actuations, by using the conductive-oxide
LaNiO3 (LNO) layers as the electrodes.
Original language | English |
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Number of pages | 1 |
Publication status | Published - Jul 2011 |
Event | International Conference on Materials for Advanced Tehcnologies, ICMAT 2011 - Suntec Singapore Convention & Exhibition Centre, Suntec, Singapore Duration: 26 Jun 2011 → 1 Jul 2011 |
Conference
Conference | International Conference on Materials for Advanced Tehcnologies, ICMAT 2011 |
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Abbreviated title | ICMAT |
Country/Territory | Singapore |
City | Suntec |
Period | 26/06/11 → 1/07/11 |
Keywords
- TST-uSPAM: micro Scanning Probe Array Memory
- TST-SMI: Formerly in EWI-SMI