Large Signal Excitation Measurement Techniques for Random Telegraph Signal Noise in MOSFETs

Eric Hoekstra

doi:10.1109/EURCON.2005.1630344

Large Signal Excitation Measurement Techniques for Random Telegraph Signal Noise in MOSFETs

Eric Hoekstra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

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Abstract

This paper introduces large signal excitation measurement techniques to analyze Random Telegraph Signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise. The proposed measurement technique makes trap-occupancy observation possible for every bias-situation, including the OFF-state of the transistor.

Original language	English
Title of host publication	EUROCON 2005
Subtitle of host publication	The International Conference on "Computer as a Tool"
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	1863-1866
Number of pages	4
Volume	2
ISBN (Print)	1-4244-0049-X
DOIs	https://doi.org/10.1109/EURCON.2005.1630344
Publication status	Published - 21 Nov 2005
Event	EUROCON 2005 - the International Conference on "Computer as a Tool" - Belgrade, Serbia Duration: 21 Nov 2005 → 24 Nov 2005

Conference

Conference	EUROCON 2005 - the International Conference on "Computer as a Tool"
Country/Territory	Serbia
City	Belgrade
Period	21/11/05 → 24/11/05

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10.1109/EURCON.2005.1630344

Cite this

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title = "Large Signal Excitation Measurement Techniques for Random Telegraph Signal Noise in MOSFETs",

abstract = "This paper introduces large signal excitation measurement techniques to analyze Random Telegraph Signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise. The proposed measurement technique makes trap-occupancy observation possible for every bias-situation, including the OFF-state of the transistor.",

author = "Eric Hoekstra",

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AU - Hoekstra, Eric

PY - 2005/11/21

Y1 - 2005/11/21

N2 - This paper introduces large signal excitation measurement techniques to analyze Random Telegraph Signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise. The proposed measurement technique makes trap-occupancy observation possible for every bias-situation, including the OFF-state of the transistor.

AB - This paper introduces large signal excitation measurement techniques to analyze Random Telegraph Signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise. The proposed measurement technique makes trap-occupancy observation possible for every bias-situation, including the OFF-state of the transistor.

U2 - 10.1109/EURCON.2005.1630344

DO - 10.1109/EURCON.2005.1630344

M3 - Conference contribution

SN - 1-4244-0049-X

VL - 2

SP - 1863

EP - 1866

BT - EUROCON 2005

PB - IEEE

CY - Piscataway, NJ

T2 - EUROCON 2005 - the International Conference on "Computer as a Tool"

Y2 - 21 November 2005 through 24 November 2005

ER -

Large Signal Excitation Measurement Techniques for Random Telegraph Signal Noise in MOSFETs

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