Laser annealing of self-aligned As+ implants in contact windows for ultrashallow junction formation

C. Biasotto; V. Gonda; L. K. Nanver; J. Van Der Cingel; V. Jovanović.

doi:10.1149/1-5183697

Laser annealing of self-aligned As⁺ implants in contact windows for ultrashallow junction formation

C. Biasotto^*, V. Gonda, L. K. Nanver, J. Van Der Cingel, V. Jovanović.

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

In the past it has been shown that ultrashallow junctions with minimum lateral dimensions can be made by implanting self-aligned to the contact window and using one-shot excimer laser annealing (ELA) to activate the dopants. Besides the recrystallization of the implanted Si, the final structuring at the contact window perimeter is very important for the ideality of the diode. In this paper this process is has been investigated for 5 keV As⁺ implanted in windows etched in a thermal/LPCVD oxide layer stack. The window perimeter processing is very critical but tilted implants can be used to increase the junction overlap with the window and good diode characteristics are obtained. The junction depths have been analyzed by secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A junction of only 15 nm deep with a sheet resistance of 311 Ω/square was obtained for an implantation tilt angle of 45° and laser energy density of 1000 mJ/cm², whereas the junction depth of 20 nm and sheet resistance of 220 Ω/square was obtained for the tilt of 7°.

Original language	English
Title of host publication	ECS Transactions - Microelectronics Technology and Devices - SBMicro 2009
Pages	19-27
Number of pages	9
Edition	1
DOIs	https://doi.org/10.1149/1-5183697
Publication status	Published - 1 Dec 2009
Externally published	Yes
Event	24th International Symposium on Microelectronics Technology and Devices - SBMicro 2009 - Natal, Brazil Duration: 31 Aug 2009 → 3 Sep 2009

Publication series

Name	ECS Transactions
Number	1
Volume	23
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	24th International Symposium on Microelectronics Technology and Devices - SBMicro 2009
Abbreviated title	SBMicro 2009
Country/Territory	Brazil
City	Natal
Period	31/08/09 → 3/09/09

Access to Document

10.1149/1-5183697

Cite this

@inproceedings{b36c8328a3ec4940b9725ea4e7891415,

title = "Laser annealing of self-aligned As+ implants in contact windows for ultrashallow junction formation",

abstract = "In the past it has been shown that ultrashallow junctions with minimum lateral dimensions can be made by implanting self-aligned to the contact window and using one-shot excimer laser annealing (ELA) to activate the dopants. Besides the recrystallization of the implanted Si, the final structuring at the contact window perimeter is very important for the ideality of the diode. In this paper this process is has been investigated for 5 keV As+ implanted in windows etched in a thermal/LPCVD oxide layer stack. The window perimeter processing is very critical but tilted implants can be used to increase the junction overlap with the window and good diode characteristics are obtained. The junction depths have been analyzed by secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A junction of only 15 nm deep with a sheet resistance of 311 Ω/square was obtained for an implantation tilt angle of 45° and laser energy density of 1000 mJ/cm2, whereas the junction depth of 20 nm and sheet resistance of 220 Ω/square was obtained for the tilt of 7°.",

author = "C. Biasotto and V. Gonda and Nanver, {L. K.} and {Van Der Cingel}, J. and V. Jovanovi{\'c}.",

year = "2009",

month = dec,

day = "1",

doi = "10.1149/1-5183697",

language = "English",

isbn = "9781566777377",

series = "ECS Transactions",

number = "1",

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booktitle = "ECS Transactions - Microelectronics Technology and Devices - SBMicro 2009",

edition = "1",

note = "24th International Symposium on Microelectronics Technology and Devices - SBMicro 2009, SBMicro 2009 ; Conference date: 31-08-2009 Through 03-09-2009",

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Biasotto, C, Gonda, V, Nanver, LK, Van Der Cingel, J & Jovanović., V 2009, Laser annealing of self-aligned As⁺ implants in contact windows for ultrashallow junction formation. in ECS Transactions - Microelectronics Technology and Devices - SBMicro 2009. 1 edn, ECS Transactions, no. 1, vol. 23, pp. 19-27, 24th International Symposium on Microelectronics Technology and Devices - SBMicro 2009, Natal, Brazil, 31/08/09. https://doi.org/10.1149/1-5183697

Laser annealing of self-aligned As⁺ implants in contact windows for ultrashallow junction formation. / Biasotto, C.; Gonda, V.; Nanver, L. K.; Van Der Cingel, J.; Jovanović., V.

ECS Transactions - Microelectronics Technology and Devices - SBMicro 2009. 1. ed. 2009. p. 19-27 (ECS Transactions; Vol. 23, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Biasotto, C.

AU - Gonda, V.

AU - Nanver, L. K.

AU - Van Der Cingel, J.

AU - Jovanović., V.

PY - 2009/12/1

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N2 - In the past it has been shown that ultrashallow junctions with minimum lateral dimensions can be made by implanting self-aligned to the contact window and using one-shot excimer laser annealing (ELA) to activate the dopants. Besides the recrystallization of the implanted Si, the final structuring at the contact window perimeter is very important for the ideality of the diode. In this paper this process is has been investigated for 5 keV As+ implanted in windows etched in a thermal/LPCVD oxide layer stack. The window perimeter processing is very critical but tilted implants can be used to increase the junction overlap with the window and good diode characteristics are obtained. The junction depths have been analyzed by secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A junction of only 15 nm deep with a sheet resistance of 311 Ω/square was obtained for an implantation tilt angle of 45° and laser energy density of 1000 mJ/cm2, whereas the junction depth of 20 nm and sheet resistance of 220 Ω/square was obtained for the tilt of 7°.

AB - In the past it has been shown that ultrashallow junctions with minimum lateral dimensions can be made by implanting self-aligned to the contact window and using one-shot excimer laser annealing (ELA) to activate the dopants. Besides the recrystallization of the implanted Si, the final structuring at the contact window perimeter is very important for the ideality of the diode. In this paper this process is has been investigated for 5 keV As+ implanted in windows etched in a thermal/LPCVD oxide layer stack. The window perimeter processing is very critical but tilted implants can be used to increase the junction overlap with the window and good diode characteristics are obtained. The junction depths have been analyzed by secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A junction of only 15 nm deep with a sheet resistance of 311 Ω/square was obtained for an implantation tilt angle of 45° and laser energy density of 1000 mJ/cm2, whereas the junction depth of 20 nm and sheet resistance of 220 Ω/square was obtained for the tilt of 7°.

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