Laser annealing of self-aligned As+ implants in contact windows for ultrashallow junction formation

C. Biasotto*, V. Gonda, L. K. Nanver, J. Van Der Cingel, V. Jovanović.

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

In the past it has been shown that ultrashallow junctions with minimum lateral dimensions can be made by implanting self-aligned to the contact window and using one-shot excimer laser annealing (ELA) to activate the dopants. Besides the recrystallization of the implanted Si, the final structuring at the contact window perimeter is very important for the ideality of the diode. In this paper this process is has been investigated for 5 keV As+ implanted in windows etched in a thermal/LPCVD oxide layer stack. The window perimeter processing is very critical but tilted implants can be used to increase the junction overlap with the window and good diode characteristics are obtained. The junction depths have been analyzed by secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A junction of only 15 nm deep with a sheet resistance of 311 Ω/square was obtained for an implantation tilt angle of 45° and laser energy density of 1000 mJ/cm2, whereas the junction depth of 20 nm and sheet resistance of 220 Ω/square was obtained for the tilt of 7°.

Original languageEnglish
Title of host publicationECS Transactions - Microelectronics Technology and Devices - SBMicro 2009
Pages19-27
Number of pages9
Edition1
DOIs
Publication statusPublished - 1 Dec 2009
Externally publishedYes
Event24th International Symposium on Microelectronics Technology and Devices - SBMicro 2009 - Natal, Brazil
Duration: 31 Aug 20093 Sep 2009

Publication series

NameECS Transactions
Number1
Volume23
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference24th International Symposium on Microelectronics Technology and Devices - SBMicro 2009
Abbreviated titleSBMicro 2009
CountryBrazil
CityNatal
Period31/08/093/09/09

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Biasotto, C., Gonda, V., Nanver, L. K., Van Der Cingel, J., & Jovanović., V. (2009). Laser annealing of self-aligned As+ implants in contact windows for ultrashallow junction formation. In ECS Transactions - Microelectronics Technology and Devices - SBMicro 2009 (1 ed., pp. 19-27). (ECS Transactions; Vol. 23, No. 1). https://doi.org/10.1149/1-5183697