Laser-induced forward transfer of intact chalcogenide thin films: resultant morphology and thermoelectric properties

Matthias Feinaeugle, C.L. Sones, E. Koukharenko, B. Gholipour, D.W. Hewak, R.W. Eason

    Research output: Contribution to journalArticleAcademicpeer-review

    15 Citations (Scopus)

    Abstract

    We present a laser-based transfer method for the novel application of fabricating elements for planar thermoelectric devices. Thin films of thermoelectric chalcogenides (Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3) were printed via laser-induced forward transfer (LIFT) onto polymer-coated substrates over large areas of up to ∼15 mm2 in size. A morphological study showed that it was possible to partially preserve the polycrystalline structure of the transferred films. The films’ Seebeck coefficients after LIFT transfer were measured and resulted in −49±1 μV/K, −93±8 μV/K and 142±3 μV/K for Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3, respectively, which were found to be ∼23±6 % lower compared to their initial values. This demonstration shows that LIFT is suitable to transfer sensitive, functional semiconductor materials over areas up to ∼15 mm2 with minimal damage onto a non-standard polymer-coated substrate.
    Original languageEnglish
    Pages (from-to)1073-1079
    Number of pages7
    JournalApplied physics A: Materials science and processing
    Volume112
    Issue number4
    DOIs
    Publication statusPublished - 14 Dec 2012

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    Thin films
    Lasers
    Chalcogenides
    Functional materials
    Seebeck coefficient
    Polymers
    Substrates
    Demonstrations
    Semiconductor materials

    Keywords

    • Bismuth
    • Thermoelectric material
    • Bi2Te3
    • Seebeck coefficient
    • Thermoelectricity

    Cite this

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    title = "Laser-induced forward transfer of intact chalcogenide thin films: resultant morphology and thermoelectric properties",
    abstract = "We present a laser-based transfer method for the novel application of fabricating elements for planar thermoelectric devices. Thin films of thermoelectric chalcogenides (Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3) were printed via laser-induced forward transfer (LIFT) onto polymer-coated substrates over large areas of up to ∼15 mm2 in size. A morphological study showed that it was possible to partially preserve the polycrystalline structure of the transferred films. The films’ Seebeck coefficients after LIFT transfer were measured and resulted in −49±1 μV/K, −93±8 μV/K and 142±3 μV/K for Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3, respectively, which were found to be ∼23±6 {\%} lower compared to their initial values. This demonstration shows that LIFT is suitable to transfer sensitive, functional semiconductor materials over areas up to ∼15 mm2 with minimal damage onto a non-standard polymer-coated substrate.",
    keywords = "Bismuth, Thermoelectric material, Bi2Te3, Seebeck coefficient, Thermoelectricity",
    author = "Matthias Feinaeugle and C.L. Sones and E. Koukharenko and B. Gholipour and D.W. Hewak and R.W. Eason",
    year = "2012",
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    language = "English",
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    Laser-induced forward transfer of intact chalcogenide thin films : resultant morphology and thermoelectric properties. / Feinaeugle, Matthias ; Sones, C.L.; Koukharenko, E.; Gholipour, B.; Hewak, D.W.; Eason, R.W.

    In: Applied physics A: Materials science and processing, Vol. 112, No. 4, 14.12.2012, p. 1073-1079.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Laser-induced forward transfer of intact chalcogenide thin films

    T2 - resultant morphology and thermoelectric properties

    AU - Feinaeugle, Matthias

    AU - Sones, C.L.

    AU - Koukharenko, E.

    AU - Gholipour, B.

    AU - Hewak, D.W.

    AU - Eason, R.W.

    PY - 2012/12/14

    Y1 - 2012/12/14

    N2 - We present a laser-based transfer method for the novel application of fabricating elements for planar thermoelectric devices. Thin films of thermoelectric chalcogenides (Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3) were printed via laser-induced forward transfer (LIFT) onto polymer-coated substrates over large areas of up to ∼15 mm2 in size. A morphological study showed that it was possible to partially preserve the polycrystalline structure of the transferred films. The films’ Seebeck coefficients after LIFT transfer were measured and resulted in −49±1 μV/K, −93±8 μV/K and 142±3 μV/K for Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3, respectively, which were found to be ∼23±6 % lower compared to their initial values. This demonstration shows that LIFT is suitable to transfer sensitive, functional semiconductor materials over areas up to ∼15 mm2 with minimal damage onto a non-standard polymer-coated substrate.

    AB - We present a laser-based transfer method for the novel application of fabricating elements for planar thermoelectric devices. Thin films of thermoelectric chalcogenides (Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3) were printed via laser-induced forward transfer (LIFT) onto polymer-coated substrates over large areas of up to ∼15 mm2 in size. A morphological study showed that it was possible to partially preserve the polycrystalline structure of the transferred films. The films’ Seebeck coefficients after LIFT transfer were measured and resulted in −49±1 μV/K, −93±8 μV/K and 142±3 μV/K for Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3, respectively, which were found to be ∼23±6 % lower compared to their initial values. This demonstration shows that LIFT is suitable to transfer sensitive, functional semiconductor materials over areas up to ∼15 mm2 with minimal damage onto a non-standard polymer-coated substrate.

    KW - Bismuth

    KW - Thermoelectric material

    KW - Bi2Te3

    KW - Seebeck coefficient

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    DO - 10.1007/s00339-012-7491-4

    M3 - Article

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