TY - JOUR
T1 - Laser-induced forward transfer of intact chalcogenide thin films
T2 - resultant morphology and thermoelectric properties
AU - Feinaeugle, Matthias
AU - Sones, C.L.
AU - Koukharenko, E.
AU - Gholipour, B.
AU - Hewak, D.W.
AU - Eason, R.W.
PY - 2012/12/14
Y1 - 2012/12/14
N2 - We present a laser-based transfer method for the novel application of fabricating elements for planar thermoelectric devices. Thin films of thermoelectric chalcogenides (Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3) were printed via laser-induced forward transfer (LIFT) onto polymer-coated substrates over large areas of up to ∼15 mm2 in size. A morphological study showed that it was possible to partially preserve the polycrystalline structure of the transferred films. The films’ Seebeck coefficients after LIFT transfer were measured and resulted in −49±1 μV/K, −93±8 μV/K and 142±3 μV/K for Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3, respectively, which were found to be ∼23±6 % lower compared to their initial values. This demonstration shows that LIFT is suitable to transfer sensitive, functional semiconductor materials over areas up to ∼15 mm2 with minimal damage onto a non-standard polymer-coated substrate.
AB - We present a laser-based transfer method for the novel application of fabricating elements for planar thermoelectric devices. Thin films of thermoelectric chalcogenides (Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3) were printed via laser-induced forward transfer (LIFT) onto polymer-coated substrates over large areas of up to ∼15 mm2 in size. A morphological study showed that it was possible to partially preserve the polycrystalline structure of the transferred films. The films’ Seebeck coefficients after LIFT transfer were measured and resulted in −49±1 μV/K, −93±8 μV/K and 142±3 μV/K for Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3, respectively, which were found to be ∼23±6 % lower compared to their initial values. This demonstration shows that LIFT is suitable to transfer sensitive, functional semiconductor materials over areas up to ∼15 mm2 with minimal damage onto a non-standard polymer-coated substrate.
KW - Bismuth
KW - Thermoelectric material
KW - Bi2Te3
KW - Seebeck coefficient
KW - Thermoelectricity
U2 - 10.1007/s00339-012-7491-4
DO - 10.1007/s00339-012-7491-4
M3 - Article
VL - 112
SP - 1073
EP - 1079
JO - Applied physics A: Materials science and processing
JF - Applied physics A: Materials science and processing
SN - 0947-8396
IS - 4
ER -