Laser-induced subsurface modification of silicon wafers

Wafer dicing is the technology to separate wafers into divided components known as dies. New developments in the semiconductor industry, such as die stacking and the development of microelectromechanical systems, present significant challenges to the dicing process. A promising wafer dicing method is laser-induced subsurface separation, as it is dry and debris-free. This method consists of two steps. First, sub-surface modifications are created inside the wafer by pulsed lasers, without inducing any damage to the surface. Secondly, a force is exerted on the wafer, causing it to separate along the laser-induced modifications. The objective of this thesis is to investigate the laser-material interaction during the formation of subsurface odifications in crystalline silicon. Based on experiments and numerical simulations, laser processes are proposed that are suitable for integration in industrial equipment.