Laser interferometric nanolithography using a new positive chemical amplified resist

The authors report on the progress of laser interference lithography at 266 nm laser wavelength with a chemical amplified resist containing a polyvinyl derivate dissolved in propylene glycol monoethyl ether ester. A continuous-wave deep-UV source combined with a Lloyd mirror is a simple and useful tool for the fabrication of nanoscale periodic structures generally called nanoarrays. Aiming for a robust pattern transfer technique to fabricate nanoarrays into magnetic materials, the authors investigated the utility of a chemical amplification positive tone resist, despite the relatively high theoretical resolution limit of 133 nm (λ2) pattern period for the laser source used. Taking advantage of this new type of resist, the authors demonstrated for the first time the fabrication of an 18 Gbit in.2 dot pattern on a platinum thin film. © 2007 American Vacuum Society.