Laser interferometric nanolithography using a new positive chemical amplified resist

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Abstract

The authors report on the progress of laser interference lithography at 266 nm laser wavelength with a chemical amplified resist containing a polyvinyl derivate dissolved in propylene glycol monoethyl ether ester. A continuous-wave deep-UV source combined with a Lloyd mirror is a simple and useful tool for the fabrication of nanoscale periodic structures generally called nanoarrays. Aiming for a robust pattern transfer technique to fabricate nanoarrays into magnetic materials, the authors investigated the utility of a chemical amplification positive tone resist, despite the relatively high theoretical resolution limit of 133 nm (λ2) pattern period for the laser source used. Taking advantage of this new type of resist, the authors demonstrated for the first time the fabrication of an 18 Gbit in.2 dot pattern on a platinum thin film. © 2007 American Vacuum Society.
Original languageEnglish
Pages (from-to)2476-2480
Number of pages5
JournalJournal of vacuum science and technology. B: Microelectronics and nanometer structures
Volume25
Issue number6
DOIs
Publication statusPublished - Nov 2007
Event51st International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, EIPBN 2007 - Adam's Mark, Denver, United States
Duration: 29 May 20071 Jun 2007
Conference number: 51

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Keywords

  • TST-LIL: Laser Interference Lithography
  • TST-SMI: Formerly in EWI-SMI

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