Lateral bipolar structures for evaluating the effectiveness of surface doping techniques

Gianpaolo Lorito; Lin Qi; L. K. Nanver

doi:10.1109/ICMTS.2011.5976870

Lateral bipolar structures for evaluating the effectiveness of surface doping techniques

Gianpaolo Lorito^*, Lin Qi, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

A lateral bipolar test structure is presented for evaluating the effectiveness of surface doping techniques used to fabricate ultrashallow diodes and ohmic contacts. The test structure requires very limited processing and simple I-V measurements provide a separation of the hole and electron currents across the junction under investigation. The ability to discern between Schottky-like and pn-junction diodes is demonstrated by the measurement of a series of junctions fabricated by arsenic dopant deposition plus laser annealing. The activation and drive-in of the deposited arsenic is tuned by the laser energy.

Original language	English
Title of host publication	2011 IEEE International Conference on Microelectronic Test Structures - 24th ICMTS Conference Proceedings
Pages	108-113
Number of pages	6
DOIs	https://doi.org/10.1109/ICMTS.2011.5976870
Publication status	Published - 9 Sept 2011
Externally published	Yes
Event	24th International Conference on Microelectronic Test Structures, ICMTS 2011 - Amsterdam, Netherlands Duration: 4 Apr 2011 → 7 Apr 2011 Conference number: 24 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf

Publication series

Name	IEEE International Conference on Microelectronic Test Structures

Conference

Conference	24th International Conference on Microelectronic Test Structures, ICMTS 2011
Abbreviated title	ICMTS
Country/Territory	Netherlands
City	Amsterdam
Period	4/04/11 → 7/04/11
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf

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10.1109/ICMTS.2011.5976870

Cite this

Lorito, G., Qi, L., & Nanver, L. K. (2011). Lateral bipolar structures for evaluating the effectiveness of surface doping techniques. In 2011 IEEE International Conference on Microelectronic Test Structures - 24th ICMTS Conference Proceedings (pp. 108-113). Article 5976870 (IEEE International Conference on Microelectronic Test Structures). https://doi.org/10.1109/ICMTS.2011.5976870

@inproceedings{dc7d490feda948fa8540e2703ff0d587,

title = "Lateral bipolar structures for evaluating the effectiveness of surface doping techniques",

abstract = "A lateral bipolar test structure is presented for evaluating the effectiveness of surface doping techniques used to fabricate ultrashallow diodes and ohmic contacts. The test structure requires very limited processing and simple I-V measurements provide a separation of the hole and electron currents across the junction under investigation. The ability to discern between Schottky-like and pn-junction diodes is demonstrated by the measurement of a series of junctions fabricated by arsenic dopant deposition plus laser annealing. The activation and drive-in of the deposited arsenic is tuned by the laser energy.",

author = "Gianpaolo Lorito and Lin Qi and Nanver, {L. K.}",

year = "2011",

month = sep,

day = "9",

doi = "10.1109/ICMTS.2011.5976870",

language = "English",

isbn = "9781424485277",

series = "IEEE International Conference on Microelectronic Test Structures",

pages = "108--113",

booktitle = "2011 IEEE International Conference on Microelectronic Test Structures - 24th ICMTS Conference Proceedings",

note = "24th International Conference on Microelectronic Test Structures, ICMTS 2011, ICMTS ; Conference date: 04-04-2011 Through 07-04-2011",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf",

}

Lorito, G, Qi, L & Nanver, LK 2011, Lateral bipolar structures for evaluating the effectiveness of surface doping techniques. in 2011 IEEE International Conference on Microelectronic Test Structures - 24th ICMTS Conference Proceedings., 5976870, IEEE International Conference on Microelectronic Test Structures, pp. 108-113, 24th International Conference on Microelectronic Test Structures, ICMTS 2011, Amsterdam, Netherlands, 4/04/11. https://doi.org/10.1109/ICMTS.2011.5976870

Lateral bipolar structures for evaluating the effectiveness of surface doping techniques. / Lorito, Gianpaolo; Qi, Lin; Nanver, L. K.
2011 IEEE International Conference on Microelectronic Test Structures - 24th ICMTS Conference Proceedings. 2011. p. 108-113 5976870 (IEEE International Conference on Microelectronic Test Structures).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Lorito, Gianpaolo

AU - Qi, Lin

AU - Nanver, L. K.

N1 - Conference code: 24

PY - 2011/9/9

Y1 - 2011/9/9

N2 - A lateral bipolar test structure is presented for evaluating the effectiveness of surface doping techniques used to fabricate ultrashallow diodes and ohmic contacts. The test structure requires very limited processing and simple I-V measurements provide a separation of the hole and electron currents across the junction under investigation. The ability to discern between Schottky-like and pn-junction diodes is demonstrated by the measurement of a series of junctions fabricated by arsenic dopant deposition plus laser annealing. The activation and drive-in of the deposited arsenic is tuned by the laser energy.

AB - A lateral bipolar test structure is presented for evaluating the effectiveness of surface doping techniques used to fabricate ultrashallow diodes and ohmic contacts. The test structure requires very limited processing and simple I-V measurements provide a separation of the hole and electron currents across the junction under investigation. The ability to discern between Schottky-like and pn-junction diodes is demonstrated by the measurement of a series of junctions fabricated by arsenic dopant deposition plus laser annealing. The activation and drive-in of the deposited arsenic is tuned by the laser energy.

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DO - 10.1109/ICMTS.2011.5976870

M3 - Conference contribution

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SN - 9781424485277

T3 - IEEE International Conference on Microelectronic Test Structures

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BT - 2011 IEEE International Conference on Microelectronic Test Structures - 24th ICMTS Conference Proceedings

T2 - 24th International Conference on Microelectronic Test Structures, ICMTS 2011

Y2 - 4 April 2011 through 7 April 2011

ER -

Lateral bipolar structures for evaluating the effectiveness of surface doping techniques

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