Lateral bipolar structures for evaluating the effectiveness of surface doping techniques

Gianpaolo Lorito*, Lin Qi, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

A lateral bipolar test structure is presented for evaluating the effectiveness of surface doping techniques used to fabricate ultrashallow diodes and ohmic contacts. The test structure requires very limited processing and simple I-V measurements provide a separation of the hole and electron currents across the junction under investigation. The ability to discern between Schottky-like and pn-junction diodes is demonstrated by the measurement of a series of junctions fabricated by arsenic dopant deposition plus laser annealing. The activation and drive-in of the deposited arsenic is tuned by the laser energy.

Original languageEnglish
Title of host publication2011 IEEE International Conference on Microelectronic Test Structures - 24th ICMTS Conference Proceedings
Pages108-113
Number of pages6
DOIs
Publication statusPublished - 9 Sep 2011
Externally publishedYes
Event24th International Conference on Microelectronic Test Structures, ICMTS 2011 - Amsterdam, Netherlands
Duration: 4 Apr 20117 Apr 2011
Conference number: 24
http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Conference

Conference24th International Conference on Microelectronic Test Structures, ICMTS 2011
Abbreviated titleICMTS
CountryNetherlands
CityAmsterdam
Period4/04/117/04/11
Internet address

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