Lateral-Transistor Test Structures for Evaluating the Effectiveness of Surface Doping Techniques

Lin Qi, Gianpaolo Lorito, Lis K. Nanver

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)


This paper presents a lateral-transistor test structure for evaluating the effectiveness of surface doping techniques used to fabricate ultrashallow diodes and ohmic contacts. The test structure requires very limited processing, and simple I-V measurements provide a separation of the hole and electron currents across the junction under investigation. The theoretical behavior is verified by Sentaurus simulations. The ability to discern between Schottky-like and pn-junction diodes is demonstrated by the measurement of a series of junctions fabricated by arsenic dopant deposition plus laser annealing. The activation and drivein of the deposited arsenic is tuned by the laser energy. The anomalous behavior theoretically predicted for very thin, lightly-doped junctions is observed experimentally. Considerations for an optimal design of the test structures are given.

Original languageEnglish
Pages (from-to)581-588
Number of pages8
JournalIEEE Transactions on Semiconductor Manufacturing
Issue number4
Publication statusPublished - 1 Jan 2012
Externally publishedYes


  • Arsenic deposition
  • excimer laser annealing
  • lateral bipolar transistors
  • minority carriers injection
  • pn-junction diodes
  • Schottky diodes
  • ultrashallow diodes


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