Laterally confined large-grained Poly-GeSi films: Crystallization and dopant activation using green laser

B. Rangarajan, Alexeij Y. Kovalgin, P. Oesterlin, R. de Kloe, I. Brunets, Jurriaan Schmitz

    Research output: Contribution to journalArticleAcademicpeer-review

    3 Citations (Scopus)

    Abstract

    This paper reports crystallization with a pulsed Yb:YAG thin disk laser (λ = 515 nm) of amorphous Ge0.85Si0.15 films approximately 100 nm thick, on silicon wafers with thermal oxide. Pre-patterned lines were employed to steer the crystallization and to form confined large grains. In total, 64% of the grains were longer than 2 μm, among them 40% were reaching 8–35 μm in length. These values, orders of magnitude larger than the layer thickness, were a result of so-called super-lateral growth. The grains were laterally confined within a 3 μm wide space. The crystallization led to a substantial residual tensile stress with a strain of 3.4%. Green-laser activation of BF2 +, As+ and P+ implants was studied in amorphous and polycrystalline Ge0.85Si0.15 films and led to successful dopant activation with resistivity values in the range of 5–20 m_-cm achieved for all the implants.
    Original languageUndefined
    Pages (from-to)263-268
    Number of pages6
    JournalECS journal of solid state science and technology
    Volume1
    Issue number6
    DOIs
    Publication statusPublished - 1 Oct 2012

    Keywords

    • EWI-22595
    • IR-82338
    • METIS-296152

    Cite this

    @article{e5ffe5a4f19849e3b2b3c29dd7a85106,
    title = "Laterally confined large-grained Poly-GeSi films: Crystallization and dopant activation using green laser",
    abstract = "This paper reports crystallization with a pulsed Yb:YAG thin disk laser (λ = 515 nm) of amorphous Ge0.85Si0.15 films approximately 100 nm thick, on silicon wafers with thermal oxide. Pre-patterned lines were employed to steer the crystallization and to form confined large grains. In total, 64{\%} of the grains were longer than 2 μm, among them 40{\%} were reaching 8–35 μm in length. These values, orders of magnitude larger than the layer thickness, were a result of so-called super-lateral growth. The grains were laterally confined within a 3 μm wide space. The crystallization led to a substantial residual tensile stress with a strain of 3.4{\%}. Green-laser activation of BF2 +, As+ and P+ implants was studied in amorphous and polycrystalline Ge0.85Si0.15 films and led to successful dopant activation with resistivity values in the range of 5–20 m_-cm achieved for all the implants.",
    keywords = "EWI-22595, IR-82338, METIS-296152",
    author = "B. Rangarajan and Kovalgin, {Alexeij Y.} and P. Oesterlin and {de Kloe}, R. and I. Brunets and Jurriaan Schmitz",
    note = "eemcs-eprint-22595",
    year = "2012",
    month = "10",
    day = "1",
    doi = "10.1149/2.011206jss",
    language = "Undefined",
    volume = "1",
    pages = "263--268",
    journal = "ECS journal of solid state science and technology",
    issn = "2162-8769",
    publisher = "The Electrochemical Society Inc.",
    number = "6",

    }

    Laterally confined large-grained Poly-GeSi films: Crystallization and dopant activation using green laser. / Rangarajan, B.; Kovalgin, Alexeij Y.; Oesterlin, P.; de Kloe, R.; Brunets, I.; Schmitz, Jurriaan.

    In: ECS journal of solid state science and technology, Vol. 1, No. 6, 01.10.2012, p. 263-268.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Laterally confined large-grained Poly-GeSi films: Crystallization and dopant activation using green laser

    AU - Rangarajan, B.

    AU - Kovalgin, Alexeij Y.

    AU - Oesterlin, P.

    AU - de Kloe, R.

    AU - Brunets, I.

    AU - Schmitz, Jurriaan

    N1 - eemcs-eprint-22595

    PY - 2012/10/1

    Y1 - 2012/10/1

    N2 - This paper reports crystallization with a pulsed Yb:YAG thin disk laser (λ = 515 nm) of amorphous Ge0.85Si0.15 films approximately 100 nm thick, on silicon wafers with thermal oxide. Pre-patterned lines were employed to steer the crystallization and to form confined large grains. In total, 64% of the grains were longer than 2 μm, among them 40% were reaching 8–35 μm in length. These values, orders of magnitude larger than the layer thickness, were a result of so-called super-lateral growth. The grains were laterally confined within a 3 μm wide space. The crystallization led to a substantial residual tensile stress with a strain of 3.4%. Green-laser activation of BF2 +, As+ and P+ implants was studied in amorphous and polycrystalline Ge0.85Si0.15 films and led to successful dopant activation with resistivity values in the range of 5–20 m_-cm achieved for all the implants.

    AB - This paper reports crystallization with a pulsed Yb:YAG thin disk laser (λ = 515 nm) of amorphous Ge0.85Si0.15 films approximately 100 nm thick, on silicon wafers with thermal oxide. Pre-patterned lines were employed to steer the crystallization and to form confined large grains. In total, 64% of the grains were longer than 2 μm, among them 40% were reaching 8–35 μm in length. These values, orders of magnitude larger than the layer thickness, were a result of so-called super-lateral growth. The grains were laterally confined within a 3 μm wide space. The crystallization led to a substantial residual tensile stress with a strain of 3.4%. Green-laser activation of BF2 +, As+ and P+ implants was studied in amorphous and polycrystalline Ge0.85Si0.15 films and led to successful dopant activation with resistivity values in the range of 5–20 m_-cm achieved for all the implants.

    KW - EWI-22595

    KW - IR-82338

    KW - METIS-296152

    U2 - 10.1149/2.011206jss

    DO - 10.1149/2.011206jss

    M3 - Article

    VL - 1

    SP - 263

    EP - 268

    JO - ECS journal of solid state science and technology

    JF - ECS journal of solid state science and technology

    SN - 2162-8769

    IS - 6

    ER -