Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy

Jacobus Marinus Sturm; A. Zinine; Herbert Wormeester; R.G. Bankras; J. Holleman; Jurriaan Schmitz; Bene Poelsema

doi:10.1016/j.mee.2005.04.015

Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy

Jacobus Marinus Sturm, A. Zinine, Herbert Wormeester, R.G. Bankras, J. Holleman, Jurriaan Schmitz, Bene Poelsema

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance of the tip image in the substrate for a quantitative understanding of the image contrast. The Contact Potential Difference and differential capacitance were probed by means of bias modulation and lock-in detection at the 1st and 2nd harmonic, respectively. A difference in topography-capacitance cross-correlation was found between Al2O3 deposited on hydrogen-terminated Si and thermal SiO2, which can be attributed to substrate-inhibited versus non-inhibited deposition.

Original language	Undefined
Pages (from-to)	78-81
Number of pages	4
Journal	Microelectronic engineering
Volume	80
DOIs	https://doi.org/10.1016/j.mee.2005.04.015
Publication status	Published - 17 Jun 2005
Event	14th biennial Conference on Insulating Films on Semiconductors, INFOS 2005 - Leuven, Belgium Duration: 22 Jun 2005 → 24 Jun 2005 Conference number: 14

Keywords

METIS-224514
Kelvin Probe Force Microscopy
EWI-15500
IR-67706
ALD
AFM

Access to Document

10.1016/j.mee.2005.04.015

http://eprints.eemcs.utwente.nl/secure2/15500/01/micr_eng_sturm.pdf

Cite this

@article{1492bbb202a1413fa297d2734fc5078a,

title = "Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy",

abstract = "Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance of the tip image in the substrate for a quantitative understanding of the image contrast. The Contact Potential Difference and differential capacitance were probed by means of bias modulation and lock-in detection at the 1st and 2nd harmonic, respectively. A difference in topography-capacitance cross-correlation was found between Al2O3 deposited on hydrogen-terminated Si and thermal SiO2, which can be attributed to substrate-inhibited versus non-inhibited deposition.",

keywords = "METIS-224514, Kelvin Probe Force Microscopy, EWI-15500, IR-67706, ALD, AFM",

author = "Sturm, \{Jacobus Marinus\} and A. Zinine and Herbert Wormeester and R.G. Bankras and J. Holleman and Jurriaan Schmitz and Bene Poelsema",

year = "2005",

month = jun,

day = "17",

doi = "10.1016/j.mee.2005.04.015",

language = "Undefined",

volume = "80",

pages = "78--81",

journal = "Microelectronic engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

note = "14th biennial Conference on Insulating Films on Semiconductors, INFOS 2005 ; Conference date: 22-06-2005 Through 24-06-2005",

}

TY - JOUR

T1 - Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy

AU - Sturm, Jacobus Marinus

AU - Zinine, A.

AU - Wormeester, Herbert

AU - Bankras, R.G.

AU - Holleman, J.

AU - Schmitz, Jurriaan

AU - Poelsema, Bene

N1 - Conference code: 14

PY - 2005/6/17

Y1 - 2005/6/17

N2 - Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance of the tip image in the substrate for a quantitative understanding of the image contrast. The Contact Potential Difference and differential capacitance were probed by means of bias modulation and lock-in detection at the 1st and 2nd harmonic, respectively. A difference in topography-capacitance cross-correlation was found between Al2O3 deposited on hydrogen-terminated Si and thermal SiO2, which can be attributed to substrate-inhibited versus non-inhibited deposition.

AB - Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance of the tip image in the substrate for a quantitative understanding of the image contrast. The Contact Potential Difference and differential capacitance were probed by means of bias modulation and lock-in detection at the 1st and 2nd harmonic, respectively. A difference in topography-capacitance cross-correlation was found between Al2O3 deposited on hydrogen-terminated Si and thermal SiO2, which can be attributed to substrate-inhibited versus non-inhibited deposition.

KW - METIS-224514

KW - Kelvin Probe Force Microscopy

KW - EWI-15500

KW - IR-67706

KW - ALD

KW - AFM

U2 - 10.1016/j.mee.2005.04.015

DO - 10.1016/j.mee.2005.04.015

M3 - Article

SN - 0167-9317

VL - 80

SP - 78

EP - 81

JO - Microelectronic engineering

JF - Microelectronic engineering

T2 - 14th biennial Conference on Insulating Films on Semiconductors, INFOS 2005

Y2 - 22 June 2005 through 24 June 2005

ER -