Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance of the tip image in the substrate for a quantitative understanding of the image contrast. The Contact Potential Difference and differential capacitance were probed by means of bias modulation and lock-in detection at the 1st and 2nd harmonic, respectively. A difference in topography-capacitance cross-correlation was found between Al2O3 deposited on hydrogen-terminated Si and thermal SiO2, which can be attributed to substrate-inhibited versus non-inhibited deposition.
Original languageUndefined
Article number10.1016/j.mee.2005.04.015
Pages (from-to)78-81
Number of pages4
JournalMicroelectronic engineering
Volume80
Issue number10.1016/j.mee.2005.04.015
DOIs
Publication statusPublished - 17 Jun 2005
Event14th biennial Conference on Insulating Films on Semiconductors, INFOS 2005 - Leuven, Belgium
Duration: 22 Jun 200524 Jun 2005
Conference number: 14

Keywords

  • METIS-224514
  • Kelvin Probe Force Microscopy
  • EWI-15500
  • IR-67706
  • ALD
  • AFM

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