Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance of the tip image in the substrate for a quantitative understanding of the image contrast. The Contact Potential Difference and differential capacitance were probed by means of bias modulation and lock-in detection at the 1st and 2nd harmonic, respectively. A difference in topography-capacitance cross-correlation was found between Al2O3 deposited on hydrogen-terminated Si and thermal SiO2, which can be attributed to substrate-inhibited versus non-inhibited deposition.
|Number of pages||4|
|Publication status||Published - 17 Jun 2005|
|Event||14th biennial Conference on Insulating Films on Semiconductors, INFOS 2005 - Leuven, Belgium|
Duration: 22 Jun 2005 → 24 Jun 2005
Conference number: 14
- Kelvin Probe Force Microscopy
Sturm, J. M., Zinine, A., Wormeester, H., Bankras, R. G., Holleman, J., Schmitz, J., & Poelsema, B. (2005). Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy. Microelectronic engineering, 80(10.1016/j.mee.2005.04.015), 78-81. [10.1016/j.mee.2005.04.015]. https://doi.org/10.1016/j.mee.2005.04.015