Abstract
Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance of the tip image in the substrate for a quantitative understanding of the image contrast. The Contact Potential Difference and differential capacitance were probed by means of bias modulation and lock-in detection at the 1st and 2nd harmonic, respectively. A difference in topography-capacitance cross-correlation was found between Al2O3 deposited on hydrogen-terminated Si and thermal SiO2, which can be attributed to substrate-inhibited versus non-inhibited deposition.
Original language | Undefined |
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Pages (from-to) | 78-81 |
Number of pages | 4 |
Journal | Microelectronic engineering |
Volume | 80 |
DOIs | |
Publication status | Published - 17 Jun 2005 |
Event | 14th biennial Conference on Insulating Films on Semiconductors, INFOS 2005 - Leuven, Belgium Duration: 22 Jun 2005 → 24 Jun 2005 Conference number: 14 |
Keywords
- METIS-224514
- Kelvin Probe Force Microscopy
- EWI-15500
- IR-67706
- ALD
- AFM