Latest developments of the spin-valve transistor

J.C. Lodder; D.J. Monsma; R.H. Mollema; T. Shimatsu; T. Shimatsu; R. Vlutters

doi:10.1016/S0304-8853(97)00594-5

Latest developments of the spin-valve transistor

J.C. Lodder, D.J. Monsma, R.H. Mollema, T. Shimatsu, T. Shimatsu, R. Vlutters

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Abstract

The magnetic hysteresis associated with the magnetization reversal of the free layer in a spin valve is analysed. A model is proposed which assumes a single-domain behavior of the free layer, and a fixed magnetization of the pinned layer. The model is then developed in the framework of the Stoner¿Wohlfarth coherent rotation model, where geometrical solutions are obtained by the astroid method. According to the strength of the interlayer exchange coupling, the applied field direction and the anisotropy arrangement of the magnetic layers, a general classification of the hysteresis loops is proposed. Quantitative comparisons with experiments on spin valves (e.g. NiFe/Cu/NiFe/FeMn) are shown.

Original language	English
Pages (from-to)	159-159
Journal	Journal of magnetism and magnetic materials
Volume	175
Issue number	1-2
DOIs	https://doi.org/10.1016/S0304-8853(97)00594-5
Publication status	Published - 1997
Event	1st Toyota Workshop on Magnetism and Magnetic Materials for High Density Information Storage 1997 - Brussels, Belgium Duration: 17 Apr 1997 → 18 Apr 1997

Keywords

METIS-111892
IR-14965

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10.1016/S0304-8853(97)00594-5

latest_spin-valve_transistors-lodderFinal published version, 71.3 KB

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abstract = "The magnetic hysteresis associated with the magnetization reversal of the free layer in a spin valve is analysed. A model is proposed which assumes a single-domain behavior of the free layer, and a fixed magnetization of the pinned layer. The model is then developed in the framework of the Stoner¿Wohlfarth coherent rotation model, where geometrical solutions are obtained by the astroid method. According to the strength of the interlayer exchange coupling, the applied field direction and the anisotropy arrangement of the magnetic layers, a general classification of the hysteresis loops is proposed. Quantitative comparisons with experiments on spin valves (e.g. NiFe/Cu/NiFe/FeMn) are shown.",

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T1 - Latest developments of the spin-valve transistor

AU - Lodder, J.C.

AU - Monsma, D.J.

AU - Mollema, R.H.

AU - Shimatsu, T.

AU - Vlutters, R.

PY - 1997

Y1 - 1997

N2 - The magnetic hysteresis associated with the magnetization reversal of the free layer in a spin valve is analysed. A model is proposed which assumes a single-domain behavior of the free layer, and a fixed magnetization of the pinned layer. The model is then developed in the framework of the Stoner¿Wohlfarth coherent rotation model, where geometrical solutions are obtained by the astroid method. According to the strength of the interlayer exchange coupling, the applied field direction and the anisotropy arrangement of the magnetic layers, a general classification of the hysteresis loops is proposed. Quantitative comparisons with experiments on spin valves (e.g. NiFe/Cu/NiFe/FeMn) are shown.

AB - The magnetic hysteresis associated with the magnetization reversal of the free layer in a spin valve is analysed. A model is proposed which assumes a single-domain behavior of the free layer, and a fixed magnetization of the pinned layer. The model is then developed in the framework of the Stoner¿Wohlfarth coherent rotation model, where geometrical solutions are obtained by the astroid method. According to the strength of the interlayer exchange coupling, the applied field direction and the anisotropy arrangement of the magnetic layers, a general classification of the hysteresis loops is proposed. Quantitative comparisons with experiments on spin valves (e.g. NiFe/Cu/NiFe/FeMn) are shown.

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KW - IR-14965

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T2 - 1st Toyota Workshop on Magnetism and Magnetic Materials for High Density Information Storage 1997

Y2 - 17 April 1997 through 18 April 1997

ER -

Latest developments of the spin-valve transistor

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Keywords

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