Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers

Duc Minh Nguyen; Jan M. Dekkers; Evert Pieter Houwman; H.T. Vu; Hung N. Vu; Augustinus J.H.M. Rijnders

doi:10.1016/j.matlet.2015.11.044

Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers

Duc Minh Nguyen, Jan M. Dekkers, Evert Pieter Houwman, H.T. Vu, Hung N. Vu, Augustinus J.H.M. Rijnders

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization Psat, longitudinal d33,f and transverse (d31,f and e31,f) piezoelectric coefficients of the KNN films were determined (Pr=12.6 µC/cm2, Psat=25.0 µC/cm2, d33,f=58 pm/V, d31,f=−42 pm/V and e31,f=−5.6 C/m2). These values are well comparable with the highest values reported for lead-free films of different compositions and therefore these KNN films form a potential alternative to PZT films in lead-free MEMS applications.

Original language	English
Pages (from-to)	413-416
Number of pages	4
Journal	Materials letters
Volume	164
DOIs	https://doi.org/10.1016/j.matlet.2015.11.044
Publication status	Published - 2016

Keywords

METIS-315867
IR-100117
2023 OA procedure

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10.1016/j.matlet.2015.11.044

1-s2.0-S0167577X15308569-mainFinal published version, 646 KBLicence: Taverne

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@article{a77947b80ecf4daeaad19a6a01d67b4b,

title = "Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers",

abstract = "Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization Psat, longitudinal d33,f and transverse (d31,f and e31,f) piezoelectric coefficients of the KNN films were determined (Pr=12.6 µC/cm2, Psat=25.0 µC/cm2, d33,f=58 pm/V, d31,f=−42 pm/V and e31,f=−5.6 C/m2). These values are well comparable with the highest values reported for lead-free films of different compositions and therefore these KNN films form a potential alternative to PZT films in lead-free MEMS applications.",

keywords = "METIS-315867, IR-100117, 2023 OA procedure",

author = "Nguyen, {Duc Minh} and Dekkers, {Jan M.} and Houwman, {Evert Pieter} and H.T. Vu and Vu, {Hung N.} and Rijnders, {Augustinus J.H.M.}",

year = "2016",

doi = "10.1016/j.matlet.2015.11.044",

language = "English",

volume = "164",

pages = "413--416",

journal = "Materials letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers

AU - Nguyen, Duc Minh

AU - Dekkers, Jan M.

AU - Houwman, Evert Pieter

AU - Vu, H.T.

AU - Vu, Hung N.

AU - Rijnders, Augustinus J.H.M.

PY - 2016

Y1 - 2016

N2 - Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization Psat, longitudinal d33,f and transverse (d31,f and e31,f) piezoelectric coefficients of the KNN films were determined (Pr=12.6 µC/cm2, Psat=25.0 µC/cm2, d33,f=58 pm/V, d31,f=−42 pm/V and e31,f=−5.6 C/m2). These values are well comparable with the highest values reported for lead-free films of different compositions and therefore these KNN films form a potential alternative to PZT films in lead-free MEMS applications.

AB - Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization Psat, longitudinal d33,f and transverse (d31,f and e31,f) piezoelectric coefficients of the KNN films were determined (Pr=12.6 µC/cm2, Psat=25.0 µC/cm2, d33,f=58 pm/V, d31,f=−42 pm/V and e31,f=−5.6 C/m2). These values are well comparable with the highest values reported for lead-free films of different compositions and therefore these KNN films form a potential alternative to PZT films in lead-free MEMS applications.

KW - METIS-315867

KW - IR-100117

KW - 2023 OA procedure

U2 - 10.1016/j.matlet.2015.11.044

DO - 10.1016/j.matlet.2015.11.044

M3 - Article

SN - 0167-577X

VL - 164

SP - 413

EP - 416

JO - Materials letters

JF - Materials letters

ER -

Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers

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Keywords

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