TY - JOUR
T1 - Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers
AU - Nguyen, Duc Minh
AU - Dekkers, Jan M.
AU - Houwman, Evert Pieter
AU - Vu, H.T.
AU - Vu, Hung N.
AU - Rijnders, Augustinus J.H.M.
PY - 2016
Y1 - 2016
N2 - Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization Psat, longitudinal d33,f and transverse (d31,f and e31,f) piezoelectric coefficients of the KNN films were determined (Pr=12.6 µC/cm2, Psat=25.0 µC/cm2, d33,f=58 pm/V, d31,f=−42 pm/V and e31,f=−5.6 C/m2). These values are well comparable with the highest values reported for lead-free films of different compositions and therefore these KNN films form a potential alternative to PZT films in lead-free MEMS applications.
AB - Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization Psat, longitudinal d33,f and transverse (d31,f and e31,f) piezoelectric coefficients of the KNN films were determined (Pr=12.6 µC/cm2, Psat=25.0 µC/cm2, d33,f=58 pm/V, d31,f=−42 pm/V and e31,f=−5.6 C/m2). These values are well comparable with the highest values reported for lead-free films of different compositions and therefore these KNN films form a potential alternative to PZT films in lead-free MEMS applications.
KW - METIS-315867
KW - IR-100117
KW - 2023 OA procedure
U2 - 10.1016/j.matlet.2015.11.044
DO - 10.1016/j.matlet.2015.11.044
M3 - Article
VL - 164
SP - 413
EP - 416
JO - Materials letters
JF - Materials letters
SN - 0167-577X
ER -