Leakage current correction in quasi-static C-V measurements

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    Abstract

    The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.
    Original languageUndefined
    Title of host publicationInternational Conference of Microelectronic Test Structures ICMTS 2004
    Place of PublicationPiscataway
    PublisherIEEE Electron Devices Society
    Pages179-181
    Number of pages3
    ISBN (Print)0780382625
    Publication statusPublished - 25 Feb 2004
    Event17th International Conference on Microelectronic Test Structures, ICMTS 2004 - Yumebutai, Awaji, Japan
    Duration: 22 Mar 200425 Mar 2004
    Conference number: 17
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog04.pdf

    Publication series

    Name
    PublisherIEEE Electron Devices Soc

    Conference

    Conference17th International Conference on Microelectronic Test Structures, ICMTS 2004
    Abbreviated titleICMTS
    CountryJapan
    CityYumebutai, Awaji
    Period22/03/0425/03/04
    Internet address

    Keywords

    • METIS-217970
    • EWI-15530
    • compensation
    • leakage currents
    • MOSFET
    • Semiconductor device measurement
    • MOS capacitors
    • IR-47466

    Cite this

    Schmitz, J., Weusthof, M. H. H., & Hof, A. J. (2004). Leakage current correction in quasi-static C-V measurements. In International Conference of Microelectronic Test Structures ICMTS 2004 (pp. 179-181). Piscataway: IEEE Electron Devices Society.