Leakage current correction in quasi-static C-V measurements

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

13 Citations (Scopus)
124 Downloads (Pure)

Abstract

The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.
Original languageUndefined
Title of host publicationInternational Conference of Microelectronic Test Structures ICMTS 2004
Place of PublicationPiscataway
PublisherIEEE Electron Devices Society
Pages179-181
Number of pages3
ISBN (Print)0780382625
Publication statusPublished - 25 Feb 2004
Event17th International Conference on Microelectronic Test Structures, ICMTS 2004 - Yumebutai, Awaji, Japan
Duration: 22 Mar 200425 Mar 2004
Conference number: 17
http://www.homepages.ed.ac.uk/ajw/ICMTS/prog04.pdf

Publication series

Name
PublisherIEEE Electron Devices Soc

Conference

Conference17th International Conference on Microelectronic Test Structures, ICMTS 2004
Abbreviated titleICMTS
CountryJapan
CityYumebutai, Awaji
Period22/03/0425/03/04
Internet address

Keywords

  • METIS-217970
  • EWI-15530
  • compensation
  • leakage currents
  • MOSFET
  • Semiconductor device measurement
  • MOS capacitors
  • IR-47466

Cite this

Schmitz, J., Weusthof, M. H. H., & Hof, A. J. (2004). Leakage current correction in quasi-static C-V measurements. In International Conference of Microelectronic Test Structures ICMTS 2004 (pp. 179-181). Piscataway: IEEE Electron Devices Society.
Schmitz, Jurriaan ; Weusthof, Marcel H.H. ; Hof, A.J. / Leakage current correction in quasi-static C-V measurements. International Conference of Microelectronic Test Structures ICMTS 2004. Piscataway : IEEE Electron Devices Society, 2004. pp. 179-181
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abstract = "The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.",
keywords = "METIS-217970, EWI-15530, compensation, leakage currents, MOSFET, Semiconductor device measurement, MOS capacitors, IR-47466",
author = "Jurriaan Schmitz and Weusthof, {Marcel H.H.} and A.J. Hof",
year = "2004",
month = "2",
day = "25",
language = "Undefined",
isbn = "0780382625",
publisher = "IEEE Electron Devices Society",
pages = "179--181",
booktitle = "International Conference of Microelectronic Test Structures ICMTS 2004",
address = "United States",

}

Schmitz, J, Weusthof, MHH & Hof, AJ 2004, Leakage current correction in quasi-static C-V measurements. in International Conference of Microelectronic Test Structures ICMTS 2004. IEEE Electron Devices Society, Piscataway, pp. 179-181, 17th International Conference on Microelectronic Test Structures, ICMTS 2004, Yumebutai, Awaji, Japan, 22/03/04.

Leakage current correction in quasi-static C-V measurements. / Schmitz, Jurriaan; Weusthof, Marcel H.H.; Hof, A.J.

International Conference of Microelectronic Test Structures ICMTS 2004. Piscataway : IEEE Electron Devices Society, 2004. p. 179-181.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Leakage current correction in quasi-static C-V measurements

AU - Schmitz, Jurriaan

AU - Weusthof, Marcel H.H.

AU - Hof, A.J.

PY - 2004/2/25

Y1 - 2004/2/25

N2 - The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.

AB - The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.

KW - METIS-217970

KW - EWI-15530

KW - compensation

KW - leakage currents

KW - MOSFET

KW - Semiconductor device measurement

KW - MOS capacitors

KW - IR-47466

M3 - Conference contribution

SN - 0780382625

SP - 179

EP - 181

BT - International Conference of Microelectronic Test Structures ICMTS 2004

PB - IEEE Electron Devices Society

CY - Piscataway

ER -

Schmitz J, Weusthof MHH, Hof AJ. Leakage current correction in quasi-static C-V measurements. In International Conference of Microelectronic Test Structures ICMTS 2004. Piscataway: IEEE Electron Devices Society. 2004. p. 179-181