Leakage current correction in quasi-static C-V measurements

Jurriaan Schmitz; Marcel H.H. Weusthof; A.J. Hof

Leakage current correction in quasi-static C-V measurements

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.

Original language	Undefined
Title of host publication	International Conference of Microelectronic Test Structures ICMTS 2004
Place of Publication	Piscataway
Publisher	IEEE
Pages	179-181
Number of pages	3
ISBN (Print)	0780382625
Publication status	Published - 25 Feb 2004
Event	17th International Conference on Microelectronic Test Structures, ICMTS 2004 - Yumebutai, Awaji, Japan Duration: 22 Mar 2004 → 25 Mar 2004 Conference number: 17 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog04.pdf

Publication series

Name
Publisher	IEEE Electron Devices Soc

Conference

Conference	17th International Conference on Microelectronic Test Structures, ICMTS 2004
Abbreviated title	ICMTS
Country/Territory	Japan
City	Yumebutai, Awaji
Period	22/03/04 → 25/03/04
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog04.pdf

Keywords

METIS-217970
EWI-15530
compensation
leakage currents
MOSFET
Semiconductor device measurement
MOS capacitors
IR-47466

Access to Document

http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1309475

Cite this

@inproceedings{7a135913a7404896aa5ff9e30ed7bc1d,

title = "Leakage current correction in quasi-static C-V measurements",

abstract = "The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.",

keywords = "METIS-217970, EWI-15530, compensation, leakage currents, MOSFET, Semiconductor device measurement, MOS capacitors, IR-47466",

author = "Jurriaan Schmitz and Weusthof, \{Marcel H.H.\} and A.J. Hof",

year = "2004",

month = feb,

day = "25",

language = "Undefined",

isbn = "0780382625",

publisher = "IEEE",

pages = "179--181",

booktitle = "International Conference of Microelectronic Test Structures ICMTS 2004",

address = "United States",

note = "17th International Conference on Microelectronic Test Structures, ICMTS 2004 ; Conference date: 22-03-2004 Through 25-03-2004",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/prog04.pdf",

}

Schmitz, J , Weusthof, MHH & Hof, AJ 2004, Leakage current correction in quasi-static C-V measurements. in International Conference of Microelectronic Test Structures ICMTS 2004. IEEE, Piscataway, pp. 179-181, 17th International Conference on Microelectronic Test Structures, ICMTS 2004, Yumebutai, Awaji, Japan, 22/03/04. <http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1309475>

TY - GEN

T1 - Leakage current correction in quasi-static C-V measurements

AU - Schmitz, Jurriaan

AU - Weusthof, Marcel H.H.

AU - Hof, A.J.

N1 - Conference code: 17

PY - 2004/2/25

Y1 - 2004/2/25

N2 - The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.

AB - The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.

KW - METIS-217970

KW - EWI-15530

KW - compensation

KW - leakage currents

KW - MOSFET

KW - Semiconductor device measurement

KW - MOS capacitors

KW - IR-47466

M3 - Conference contribution

SN - 0780382625

SP - 179

EP - 181

BT - International Conference of Microelectronic Test Structures ICMTS 2004

PB - IEEE

CY - Piscataway

T2 - 17th International Conference on Microelectronic Test Structures, ICMTS 2004

Y2 - 22 March 2004 through 25 March 2004

ER -