Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs

G. Piccolo, V. Puliyankot Palackavalapil, Alexeij Y. Kovalgin, Raymond Josephus Engelbart Hueting, A. Heringa, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
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    In this paper we present the increased light emission for Si p-i-n light emitting diodes (LED) by geometrical scaling of the injector size for p- and n- type carriers. TCAD simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the diffusion current: therefore, for a particular on current, the pn-product, and hence the radiative recombination, inside the active region increases. A comparison is made among reference large-scale, micro-size and nano-size injector p-i-n diodes. We demonstrate a 4-fold increase in electroluminescence (EL) when the injectors are scaled down to micro-size and a further 10-fold increase for nano-size injectors.
    Original languageUndefined
    Title of host publication2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc)
    Place of PublicationUSA
    Number of pages4
    ISBN (Print)978-1-4577-0708-7
    Publication statusPublished - 12 Sept 2011
    Event41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland
    Duration: 12 Sept 201116 Sept 2011
    Conference number: 41

    Publication series

    PublisherIEEE Solid-State Circuits Society


    Conference41st European Solid-State Device Research Conference, ESSDERC 2011
    Abbreviated titleESSDERC


    • IR-78806
    • METIS-281534
    • Antifuse
    • p-i-n diode
    • carrier injector
    • LEDs
    • Silicon Photonics
    • EWI-20548
    • Electroluminescence

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