Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs

G. Piccolo; V. Puliyankot Palackavalapil; Alexeij Y. Kovalgin; Raymond Josephus Engelbart Hueting; A. Heringa; Jurriaan Schmitz

doi:10.1109/ESSDERC.2011.6044206

Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs

G. Piccolo, V. Puliyankot Palackavalapil, Alexeij Y. Kovalgin, Raymond Josephus Engelbart Hueting, A. Heringa, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

4 Downloads (Pure)

Abstract

In this paper we present the increased light emission for Si p-i-n light emitting diodes (LED) by geometrical scaling of the injector size for p- and n- type carriers. TCAD simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the diffusion current: therefore, for a particular on current, the pn-product, and hence the radiative recombination, inside the active region increases. A comparison is made among reference large-scale, micro-size and nano-size injector p-i-n diodes. We demonstrate a 4-fold increase in electroluminescence (EL) when the injectors are scaled down to micro-size and a further 10-fold increase for nano-size injectors.

Original language	Undefined
Title of host publication	2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc)
Place of Publication	USA
Publisher	IEEE
Pages	175-178
Number of pages	4
ISBN (Print)	978-1-4577-0708-7
DOIs	https://doi.org/10.1109/ESSDERC.2011.6044206
Publication status	Published - 12 Sept 2011
Event	41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland Duration: 12 Sept 2011 → 16 Sept 2011 Conference number: 41

Publication series

Name
Publisher	IEEE Solid-State Circuits Society

Conference

Conference	41st European Solid-State Device Research Conference, ESSDERC 2011
Abbreviated title	ESSDERC
Country/Territory	Finland
City	Helsinki
Period	12/09/11 → 16/09/11

Keywords

IR-78806
METIS-281534
Antifuse
p-i-n diode
carrier injector
LEDs
Silicon Photonics
EWI-20548
Electroluminescence

Access to Document

10.1109/ESSDERC.2011.6044206

http://eprints.eemcs.utwente.nl/secure2/20548/01/Giulia.pdf

Cite this

@inproceedings{a7c31d4880ba4a4db5e932d669eea466,

title = "Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs",

abstract = "In this paper we present the increased light emission for Si p-i-n light emitting diodes (LED) by geometrical scaling of the injector size for p- and n- type carriers. TCAD simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the diffusion current: therefore, for a particular on current, the pn-product, and hence the radiative recombination, inside the active region increases. A comparison is made among reference large-scale, micro-size and nano-size injector p-i-n diodes. We demonstrate a 4-fold increase in electroluminescence (EL) when the injectors are scaled down to micro-size and a further 10-fold increase for nano-size injectors.",

keywords = "IR-78806, METIS-281534, Antifuse, p-i-n diode, carrier injector, LEDs, Silicon Photonics, EWI-20548, Electroluminescence",

author = "G. Piccolo and {Puliyankot Palackavalapil}, V. and Kovalgin, {Alexeij Y.} and Hueting, {Raymond Josephus Engelbart} and A. Heringa and Jurriaan Schmitz",

note = "10.1109/ESSDERC.2011.6044206 ; 41st European Solid-State Device Research Conference, ESSDERC 2011 ; Conference date: 12-09-2011 Through 16-09-2011",

year = "2011",

month = sep,

day = "12",

doi = "10.1109/ESSDERC.2011.6044206",

language = "Undefined",

isbn = "978-1-4577-0708-7",

publisher = "IEEE",

pages = "175--178",

booktitle = "2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc)",

address = "United States",

}

Piccolo, G, Puliyankot Palackavalapil, V, Kovalgin, AY , Hueting, RJE, Heringa, A & Schmitz, J 2011, Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs. in 2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc). IEEE, USA, pp. 175-178, 41st European Solid-State Device Research Conference, ESSDERC 2011, Helsinki, Finland, 12/09/11. https://doi.org/10.1109/ESSDERC.2011.6044206

Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs. / Piccolo, G.; Puliyankot Palackavalapil, V.; Kovalgin, Alexeij Y. et al.
2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc). USA: IEEE, 2011. p. 175-178.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs

AU - Piccolo, G.

AU - Puliyankot Palackavalapil, V.

AU - Kovalgin, Alexeij Y.

AU - Hueting, Raymond Josephus Engelbart

AU - Heringa, A.

AU - Schmitz, Jurriaan

N1 - Conference code: 41

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Y1 - 2011/9/12

N2 - In this paper we present the increased light emission for Si p-i-n light emitting diodes (LED) by geometrical scaling of the injector size for p- and n- type carriers. TCAD simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the diffusion current: therefore, for a particular on current, the pn-product, and hence the radiative recombination, inside the active region increases. A comparison is made among reference large-scale, micro-size and nano-size injector p-i-n diodes. We demonstrate a 4-fold increase in electroluminescence (EL) when the injectors are scaled down to micro-size and a further 10-fold increase for nano-size injectors.

AB - In this paper we present the increased light emission for Si p-i-n light emitting diodes (LED) by geometrical scaling of the injector size for p- and n- type carriers. TCAD simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the diffusion current: therefore, for a particular on current, the pn-product, and hence the radiative recombination, inside the active region increases. A comparison is made among reference large-scale, micro-size and nano-size injector p-i-n diodes. We demonstrate a 4-fold increase in electroluminescence (EL) when the injectors are scaled down to micro-size and a further 10-fold increase for nano-size injectors.

KW - IR-78806

KW - METIS-281534

KW - Antifuse

KW - p-i-n diode

KW - carrier injector

KW - LEDs

KW - Silicon Photonics

KW - EWI-20548

KW - Electroluminescence

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DO - 10.1109/ESSDERC.2011.6044206

M3 - Conference contribution

SN - 978-1-4577-0708-7

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BT - 2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc)

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T2 - 41st European Solid-State Device Research Conference, ESSDERC 2011

Y2 - 12 September 2011 through 16 September 2011

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