Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures

I. Brunets; R.V.A. van Loon; R.J. Walters; A. Polman; A. Boogaard; Antonius A.I. Aarnink; Alexeij Y. Kovalgin; Robertus A.M. Wolters; J. Holleman; Jurriaan Schmitz

Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures

I. Brunets, R.V.A. van Loon, R.J. Walters, A. Polman, A. Boogaard, Antonius A.I. Aarnink, Alexeij Y. Kovalgin, Robertus A.M. Wolters, J. Holleman, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In this work, we realize light emitting functional multilayer (Al2O3 / Si-nanocrystals (Si-NC)) stacks at low temperatures (300-325 °C) by a combination of ALD and CVD techniques. The multilayer structure was obtained by a sequential deposition of a 20 nm-thick ALD Al2O3 film, followed by LPCVD of a Si-NC layer, without vacuum break. A high nanocrystal density was achieved through an enhanced nucleation rate by using trisilane (Si3H8, known as Silcore®) as precursors for LPCVD of Si-NC layers. The photoluminescence and electroluminescence of the functional multilayer stacks were measured. A decrease of the Si-NC deposition time (i.e. smaller size of Si-NC’s) provided a gradual shift of the photoluminescence peak to higher photon energies, indicating exciton confinement in the nanocrystals.

Original language	Undefined
Title of host publication	Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	399-402
Number of pages	4
ISBN (Print)	978-90-73461-56-7
Publication status	Published - 27 Nov 2008
Event	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 11

Publication series

Name
Publisher	Technology Foundation STW
Number	WoTUG-31

Workshop

Workshop	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
Abbreviated title	SAFE
Country	Netherlands
City	Veldhoven
Period	27/11/08 → 28/11/08

Keywords

SC-ICF: Integrated Circuit Fabrication
METIS-254994
IR-65213
EWI-14602

Cite this

Brunets, I., van Loon, R. V. A., Walters, R. J., Polman, A., Boogaard, A., Aarnink, A. A. I., ... Schmitz, J. (2008). Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures. In Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008) (pp. 399-402). Utrecht, The Netherlands: STW.

Brunets, I. ; van Loon, R.V.A. ; Walters, R.J. ; Polman, A. ; Boogaard, A. ; Aarnink, Antonius A.I. ; Kovalgin, Alexeij Y. ; Wolters, Robertus A.M. ; Holleman, J. ; Schmitz, Jurriaan. / Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures. Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands : STW, 2008. pp. 399-402

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title = "Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures",

abstract = "In this work, we realize light emitting functional multilayer (Al2O3 / Si-nanocrystals (Si-NC)) stacks at low temperatures (300-325 °C) by a combination of ALD and CVD techniques. The multilayer structure was obtained by a sequential deposition of a 20 nm-thick ALD Al2O3 film, followed by LPCVD of a Si-NC layer, without vacuum break. A high nanocrystal density was achieved through an enhanced nucleation rate by using trisilane (Si3H8, known as Silcore{\circledR}) as precursors for LPCVD of Si-NC layers. The photoluminescence and electroluminescence of the functional multilayer stacks were measured. A decrease of the Si-NC deposition time (i.e. smaller size of Si-NC’s) provided a gradual shift of the photoluminescence peak to higher photon energies, indicating exciton confinement in the nanocrystals.",

keywords = "SC-ICF: Integrated Circuit Fabrication, METIS-254994, IR-65213, EWI-14602",

author = "I. Brunets and {van Loon}, R.V.A. and R.J. Walters and A. Polman and A. Boogaard and Aarnink, {Antonius A.I.} and Kovalgin, {Alexeij Y.} and Wolters, {Robertus A.M.} and J. Holleman and Jurriaan Schmitz",

year = "2008",

month = "11",

day = "27",

language = "Undefined",

isbn = "978-90-73461-56-7",

publisher = "STW",

number = "WoTUG-31",

pages = "399--402",

booktitle = "Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)",

}

Brunets, I, van Loon, RVA, Walters, RJ, Polman, A, Boogaard, A, Aarnink, AAI , Kovalgin, AY , Wolters, RAM, Holleman, J & Schmitz, J 2008, Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures. in Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). STW, Utrecht, The Netherlands, pp. 399-402, 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, Veldhoven, Netherlands, 27/11/08.

Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures. / Brunets, I.; van Loon, R.V.A.; Walters, R.J.; Polman, A.; Boogaard, A.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.; Holleman, J.; Schmitz, Jurriaan.

Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands : STW, 2008. p. 399-402.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures

AU - Brunets, I.

AU - van Loon, R.V.A.

AU - Walters, R.J.

AU - Polman, A.

AU - Boogaard, A.

AU - Aarnink, Antonius A.I.

AU - Kovalgin, Alexeij Y.

AU - Wolters, Robertus A.M.

AU - Holleman, J.

AU - Schmitz, Jurriaan

PY - 2008/11/27

Y1 - 2008/11/27

N2 - In this work, we realize light emitting functional multilayer (Al2O3 / Si-nanocrystals (Si-NC)) stacks at low temperatures (300-325 °C) by a combination of ALD and CVD techniques. The multilayer structure was obtained by a sequential deposition of a 20 nm-thick ALD Al2O3 film, followed by LPCVD of a Si-NC layer, without vacuum break. A high nanocrystal density was achieved through an enhanced nucleation rate by using trisilane (Si3H8, known as Silcore®) as precursors for LPCVD of Si-NC layers. The photoluminescence and electroluminescence of the functional multilayer stacks were measured. A decrease of the Si-NC deposition time (i.e. smaller size of Si-NC’s) provided a gradual shift of the photoluminescence peak to higher photon energies, indicating exciton confinement in the nanocrystals.

AB - In this work, we realize light emitting functional multilayer (Al2O3 / Si-nanocrystals (Si-NC)) stacks at low temperatures (300-325 °C) by a combination of ALD and CVD techniques. The multilayer structure was obtained by a sequential deposition of a 20 nm-thick ALD Al2O3 film, followed by LPCVD of a Si-NC layer, without vacuum break. A high nanocrystal density was achieved through an enhanced nucleation rate by using trisilane (Si3H8, known as Silcore®) as precursors for LPCVD of Si-NC layers. The photoluminescence and electroluminescence of the functional multilayer stacks were measured. A decrease of the Si-NC deposition time (i.e. smaller size of Si-NC’s) provided a gradual shift of the photoluminescence peak to higher photon energies, indicating exciton confinement in the nanocrystals.

KW - SC-ICF: Integrated Circuit Fabrication

KW - METIS-254994

KW - IR-65213

KW - EWI-14602

M3 - Conference contribution

SN - 978-90-73461-56-7

SP - 399

EP - 402

BT - Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)

PB - STW

CY - Utrecht, The Netherlands

ER -

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