Abstract
In this work, we realize light emitting functional multilayer (Al2O3 / Si-nanocrystals (Si-NC)) stacks at low temperatures (300-325 °C) by a combination of ALD and CVD techniques. The multilayer structure was obtained by a sequential deposition of a 20 nm-thick ALD Al2O3 film, followed by LPCVD of a Si-NC layer, without vacuum break. A high nanocrystal density was achieved through an enhanced nucleation rate by using trisilane (Si3H8, known as Silcore®) as precursors for LPCVD of Si-NC layers. The photoluminescence and electroluminescence of the functional multilayer stacks were measured. A decrease of the Si-NC deposition time (i.e. smaller size of Si-NC’s) provided a gradual shift of the photoluminescence peak to higher photon energies, indicating exciton confinement in the nanocrystals.
Original language | Undefined |
---|---|
Title of host publication | Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008) |
Place of Publication | Utrecht, The Netherlands |
Publisher | STW |
Pages | 399-402 |
Number of pages | 4 |
ISBN (Print) | 978-90-73461-56-7 |
Publication status | Published - 27 Nov 2008 |
Event | 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 11 |
Publication series
Name | |
---|---|
Publisher | Technology Foundation STW |
Number | WoTUG-31 |
Workshop
Workshop | 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 |
---|---|
Abbreviated title | SAFE |
Country/Territory | Netherlands |
City | Veldhoven |
Period | 27/11/08 → 28/11/08 |
Keywords
- SC-ICF: Integrated Circuit Fabrication
- METIS-254994
- IR-65213
- EWI-14602