In this work, we realize light emitting functional multilayer (Al2O3 / Si-nanocrystals (Si-NC)) stacks at low temperatures (300-325 °C) by a combination of ALD and CVD techniques. The multilayer structure was obtained by a sequential deposition of a 20 nm-thick ALD Al2O3 film, followed by LPCVD of a Si-NC layer, without vacuum break. A high nanocrystal density was achieved through an enhanced nucleation rate by using trisilane (Si3H8, known as Silcore®) as precursors for LPCVD of Si-NC layers. The photoluminescence and electroluminescence of the functional multilayer stacks were measured. A decrease of the Si-NC deposition time (i.e. smaller size of Si-NC’s) provided a gradual shift of the photoluminescence peak to higher photon energies, indicating exciton confinement in the nanocrystals.
|Title of host publication||Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||4|
|Publication status||Published - 27 Nov 2008|
|Event||11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands|
Duration: 27 Nov 2008 → 28 Nov 2008
Conference number: 11
|Publisher||Technology Foundation STW|
|Workshop||11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008|
|Period||27/11/08 → 28/11/08|
- SC-ICF: Integrated Circuit Fabrication
Brunets, I., van Loon, R. V. A., Walters, R. J., Polman, A., Boogaard, A., Aarnink, A. A. I., ... Schmitz, J.
(2008). Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures
. In Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
(pp. 399-402). Utrecht, The Netherlands: STW.