Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures

I. Brunets, R.V.A. van Loon, R.J. Walters, A. Polman, A. Boogaard, Antonius A.I. Aarnink, Alexeij Y. Kovalgin, Robertus A.M. Wolters, J. Holleman, Jurriaan Schmitz

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    Abstract

    In this work, we realize light emitting functional multilayer (Al2O3 / Si-nanocrystals (Si-NC)) stacks at low temperatures (300-325 °C) by a combination of ALD and CVD techniques. The multilayer structure was obtained by a sequential deposition of a 20 nm-thick ALD Al2O3 film, followed by LPCVD of a Si-NC layer, without vacuum break. A high nanocrystal density was achieved through an enhanced nucleation rate by using trisilane (Si3H8, known as Silcore®) as precursors for LPCVD of Si-NC layers. The photoluminescence and electroluminescence of the functional multilayer stacks were measured. A decrease of the Si-NC deposition time (i.e. smaller size of Si-NC’s) provided a gradual shift of the photoluminescence peak to higher photon energies, indicating exciton confinement in the nanocrystals.
    Original languageUndefined
    Title of host publicationProceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages399-402
    Number of pages4
    ISBN (Print)978-90-73461-56-7
    Publication statusPublished - 27 Nov 2008
    Event11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands
    Duration: 27 Nov 200828 Nov 2008
    Conference number: 11

    Publication series

    Name
    PublisherTechnology Foundation STW
    NumberWoTUG-31

    Workshop

    Workshop11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period27/11/0828/11/08

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • METIS-254994
    • IR-65213
    • EWI-14602

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