Light emission from silicon nanometer-scale diode-antifuses

V.E. Houtsma, J. Holleman, V. Zieren, P.H. Woerlee

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)


    Results are presented of the spectrally resolved absolute measurements of the electroluminescence of reverse-biased silicon nanometer-scale diode-antifuses brought into breakdown. The emission spectrum of the diode-antifuses is measured in the energy range of 1.4 - 2.8 eV at different reverse currents. The dependence of the emission intensity on the current was evaluated to study the dominant emission processes. Also the stability of the diode-antifuses has been tested. Results indicate that the diode-antifuse is basically a high quality device. Furthermore due to the nanometer-scale dimensions of the diode-antifuse, very high electrical fields and current densities are possible at low power consumption. This makes the diode-antifuse an excellent candidate to be utilized as a light source in Si- based sensors and actuator applications.
    Original languageEnglish
    Title of host publicationApplications of photonic technology 3
    Subtitle of host publicationclosing the gap between theory, development, and application
    Place of PublicationBellingham, WA
    Number of pages5
    ISBN (Print)0-8194-2950-3
    Publication statusPublished - 27 Jul 1998
    EventInternational Conference on Applications of Photonic Technology III, ICAPT 1998 - Ottawa, Canada
    Duration: 27 Jul 199830 Jul 1998
    Conference number: 3


    ConferenceInternational Conference on Applications of Photonic Technology III, ICAPT 1998
    Abbreviated titleICAPT


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