Abstract
Results are presented of the spectrally resolved absolute measurements of the electroluminescence of reverse-biased silicon nanometer-scale diode-antifuses brought into breakdown. The emission spectrum of the diode-antifuses is measured in the energy range of 1.4 - 2.8 eV at different reverse currents. The dependence of the emission intensity on the current was evaluated to study the dominant emission processes. Also the stability of the diode-antifuses has been tested. Results indicate that the diode-antifuse is basically a high quality device. Furthermore due to the nanometer-scale dimensions of the diode-antifuse, very high electrical fields and current densities are possible at low power consumption. This makes the diode-antifuse an excellent candidate to be utilized as a light source in Si- based sensors and actuator applications.
| Original language | English |
|---|---|
| Title of host publication | Applications of photonic technology 3 |
| Subtitle of host publication | closing the gap between theory, development, and application |
| Place of Publication | Bellingham, WA |
| Publisher | SPIE |
| Pages | 209-213 |
| Number of pages | 5 |
| ISBN (Print) | 0-8194-2950-3 |
| DOIs | |
| Publication status | Published - 27 Jul 1998 |
| Event | International Conference on Applications of Photonic Technology III, ICAPT 1998 - Ottawa, Canada Duration: 27 Jul 1998 → 30 Jul 1998 Conference number: 3 |
Conference
| Conference | International Conference on Applications of Photonic Technology III, ICAPT 1998 |
|---|---|
| Abbreviated title | ICAPT |
| Country/Territory | Canada |
| City | Ottawa |
| Period | 27/07/98 → 30/07/98 |