Light emission from silicon nanometer-scale diode-antifuses

V.E. Houtsma; J. Holleman; V. Zieren; P.H. Woerlee

doi:10.1117/12.328725

Light emission from silicon nanometer-scale diode-antifuses

V.E. Houtsma
, J. Holleman
, V. Zieren
, P.H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

Results are presented of the spectrally resolved absolute measurements of the electroluminescence of reverse-biased silicon nanometer-scale diode-antifuses brought into breakdown. The emission spectrum of the diode-antifuses is measured in the energy range of 1.4 - 2.8 eV at different reverse currents. The dependence of the emission intensity on the current was evaluated to study the dominant emission processes. Also the stability of the diode-antifuses has been tested. Results indicate that the diode-antifuse is basically a high quality device. Furthermore due to the nanometer-scale dimensions of the diode-antifuse, very high electrical fields and current densities are possible at low power consumption. This makes the diode-antifuse an excellent candidate to be utilized as a light source in Si- based sensors and actuator applications.

Original language	English
Title of host publication	Applications of photonic technology 3
Subtitle of host publication	closing the gap between theory, development, and application
Place of Publication	Bellingham, WA
Publisher	SPIE
Pages	209-213
Number of pages	5
ISBN (Print)	0-8194-2950-3
DOIs	https://doi.org/10.1117/12.328725
Publication status	Published - 27 Jul 1998
Event	International Conference on Applications of Photonic Technology III, ICAPT 1998 - Ottawa, Canada Duration: 27 Jul 1998 → 30 Jul 1998 Conference number: 3

Conference

Conference	International Conference on Applications of Photonic Technology III, ICAPT 1998
Abbreviated title	ICAPT
Country/Territory	Canada
City	Ottawa
Period	27/07/98 → 30/07/98

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10.1117/12.328725

Cite this

@inproceedings{ddce699885c44e65bc955612e7dc3ff1,

title = "Light emission from silicon nanometer-scale diode-antifuses",

abstract = "Results are presented of the spectrally resolved absolute measurements of the electroluminescence of reverse-biased silicon nanometer-scale diode-antifuses brought into breakdown. The emission spectrum of the diode-antifuses is measured in the energy range of 1.4 - 2.8 eV at different reverse currents. The dependence of the emission intensity on the current was evaluated to study the dominant emission processes. Also the stability of the diode-antifuses has been tested. Results indicate that the diode-antifuse is basically a high quality device. Furthermore due to the nanometer-scale dimensions of the diode-antifuse, very high electrical fields and current densities are possible at low power consumption. This makes the diode-antifuse an excellent candidate to be utilized as a light source in Si- based sensors and actuator applications.",

author = "V.E. Houtsma and J. Holleman and V. Zieren and P.H. Woerlee",

year = "1998",

month = jul,

day = "27",

doi = "10.1117/12.328725",

language = "English",

isbn = "0-8194-2950-3",

pages = "209--213",

booktitle = "Applications of photonic technology 3",

publisher = "SPIE",

address = "United States",

note = "International Conference on Applications of Photonic Technology III, ICAPT 1998, ICAPT ; Conference date: 27-07-1998 Through 30-07-1998",

}

Houtsma, VE, Holleman, J, Zieren, V & Woerlee, PH 1998, Light emission from silicon nanometer-scale diode-antifuses. in Applications of photonic technology 3: closing the gap between theory, development, and application. SPIE, Bellingham, WA, pp. 209-213, International Conference on Applications of Photonic Technology III, ICAPT 1998, Ottawa, Ontario, Canada, 27/07/98. https://doi.org/10.1117/12.328725

TY - GEN

T1 - Light emission from silicon nanometer-scale diode-antifuses

AU - Houtsma, V.E.

AU - Holleman, J.

AU - Zieren, V.

AU - Woerlee, P.H.

N1 - Conference code: 3

PY - 1998/7/27

Y1 - 1998/7/27

N2 - Results are presented of the spectrally resolved absolute measurements of the electroluminescence of reverse-biased silicon nanometer-scale diode-antifuses brought into breakdown. The emission spectrum of the diode-antifuses is measured in the energy range of 1.4 - 2.8 eV at different reverse currents. The dependence of the emission intensity on the current was evaluated to study the dominant emission processes. Also the stability of the diode-antifuses has been tested. Results indicate that the diode-antifuse is basically a high quality device. Furthermore due to the nanometer-scale dimensions of the diode-antifuse, very high electrical fields and current densities are possible at low power consumption. This makes the diode-antifuse an excellent candidate to be utilized as a light source in Si- based sensors and actuator applications.

AB - Results are presented of the spectrally resolved absolute measurements of the electroluminescence of reverse-biased silicon nanometer-scale diode-antifuses brought into breakdown. The emission spectrum of the diode-antifuses is measured in the energy range of 1.4 - 2.8 eV at different reverse currents. The dependence of the emission intensity on the current was evaluated to study the dominant emission processes. Also the stability of the diode-antifuses has been tested. Results indicate that the diode-antifuse is basically a high quality device. Furthermore due to the nanometer-scale dimensions of the diode-antifuse, very high electrical fields and current densities are possible at low power consumption. This makes the diode-antifuse an excellent candidate to be utilized as a light source in Si- based sensors and actuator applications.

U2 - 10.1117/12.328725

DO - 10.1117/12.328725

M3 - Conference contribution

SN - 0-8194-2950-3

SP - 209

EP - 213

BT - Applications of photonic technology 3

PB - SPIE

CY - Bellingham, WA

T2 - International Conference on Applications of Photonic Technology III, ICAPT 1998

Y2 - 27 July 1998 through 30 July 1998

ER -

Light emission from silicon nanometer-scale diode-antifuses

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