Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Tihomir Knezevic, Xingyu Liu, Erwin Hardeveld, Tomislav Suligoj, Lis K. Nanver

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)

Abstract

A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection as PureB diodes fabricated with a few nm-thick PureB layer deposited at 400 °C. Assuming high concentrations of acceptor states at the B-to-Si interface, induced by a fixed negative charge in the range from \textsf {5}\times \textsf {10}^{\textbf {13}} cm ^{-\textbf {2}} to \textsf {5}\times \textsf {10}^{\textbf {14}} cm ^{-\textbf {2}} , would be consistent with the experiments and device simulations that exhibit an efficient suppression of electron injection. Metallization of the B-layers was studied, showing that in many situations, thinning of the layer to monolayer thickness will lead to a significant increase in the electron injection.

Original languageEnglish
Article number8686173
Pages (from-to)858-861
Number of pages4
JournalIEEE electron device letters
Volume40
Issue number6
Early online date11 Apr 2019
DOIs
Publication statusPublished - 1 Jun 2019

Fingerprint

Electron injection
Boron
Diodes
Metals
Monolayers
Silicon
Metallizing
Chemical vapor deposition
Experiments

Keywords

  • Chemical-vapor deposition
  • electron injection
  • monolayer
  • photodiodes
  • pure boron
  • silicon
  • ultrashallow junctions

Cite this

Knezevic, Tihomir ; Liu, Xingyu ; Hardeveld, Erwin ; Suligoj, Tomislav ; Nanver, Lis K. / Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes. In: IEEE electron device letters. 2019 ; Vol. 40, No. 6. pp. 858-861.
@article{8e9ed285a5bf43519eb27820d0b7dbfd,
title = "Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes",
abstract = "A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection as PureB diodes fabricated with a few nm-thick PureB layer deposited at 400 °C. Assuming high concentrations of acceptor states at the B-to-Si interface, induced by a fixed negative charge in the range from \textsf {5}\times \textsf {10}^{\textbf {13}} cm ^{-\textbf {2}} to \textsf {5}\times \textsf {10}^{\textbf {14}} cm ^{-\textbf {2}} , would be consistent with the experiments and device simulations that exhibit an efficient suppression of electron injection. Metallization of the B-layers was studied, showing that in many situations, thinning of the layer to monolayer thickness will lead to a significant increase in the electron injection.",
keywords = "Chemical-vapor deposition, electron injection, monolayer, photodiodes, pure boron, silicon, ultrashallow junctions",
author = "Tihomir Knezevic and Xingyu Liu and Erwin Hardeveld and Tomislav Suligoj and Nanver, {Lis K.}",
year = "2019",
month = "6",
day = "1",
doi = "10.1109/LED.2019.2910465",
language = "English",
volume = "40",
pages = "858--861",
journal = "IEEE electron device letters",
issn = "0741-3106",
publisher = "IEEE",
number = "6",

}

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes. / Knezevic, Tihomir; Liu, Xingyu; Hardeveld, Erwin; Suligoj, Tomislav; Nanver, Lis K.

In: IEEE electron device letters, Vol. 40, No. 6, 8686173, 01.06.2019, p. 858-861.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

AU - Knezevic, Tihomir

AU - Liu, Xingyu

AU - Hardeveld, Erwin

AU - Suligoj, Tomislav

AU - Nanver, Lis K.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection as PureB diodes fabricated with a few nm-thick PureB layer deposited at 400 °C. Assuming high concentrations of acceptor states at the B-to-Si interface, induced by a fixed negative charge in the range from \textsf {5}\times \textsf {10}^{\textbf {13}} cm ^{-\textbf {2}} to \textsf {5}\times \textsf {10}^{\textbf {14}} cm ^{-\textbf {2}} , would be consistent with the experiments and device simulations that exhibit an efficient suppression of electron injection. Metallization of the B-layers was studied, showing that in many situations, thinning of the layer to monolayer thickness will lead to a significant increase in the electron injection.

AB - A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection as PureB diodes fabricated with a few nm-thick PureB layer deposited at 400 °C. Assuming high concentrations of acceptor states at the B-to-Si interface, induced by a fixed negative charge in the range from \textsf {5}\times \textsf {10}^{\textbf {13}} cm ^{-\textbf {2}} to \textsf {5}\times \textsf {10}^{\textbf {14}} cm ^{-\textbf {2}} , would be consistent with the experiments and device simulations that exhibit an efficient suppression of electron injection. Metallization of the B-layers was studied, showing that in many situations, thinning of the layer to monolayer thickness will lead to a significant increase in the electron injection.

KW - Chemical-vapor deposition

KW - electron injection

KW - monolayer

KW - photodiodes

KW - pure boron

KW - silicon

KW - ultrashallow junctions

UR - http://www.scopus.com/inward/record.url?scp=85066452322&partnerID=8YFLogxK

U2 - 10.1109/LED.2019.2910465

DO - 10.1109/LED.2019.2910465

M3 - Article

VL - 40

SP - 858

EP - 861

JO - IEEE electron device letters

JF - IEEE electron device letters

SN - 0741-3106

IS - 6

M1 - 8686173

ER -