Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Tihomir Knezevic*, Xingyu Liu, Erwin Hardeveld, Tomislav Suligoj, Lis K. Nanver

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

    3 Citations (Scopus)
    3 Downloads (Pure)

    Abstract

    A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection as PureB diodes fabricated with a few nm-thick PureB layer deposited at 400 °C. Assuming high concentrations of acceptor states at the B-to-Si interface, induced by a fixed negative charge in the range from \textsf {5}\times \textsf {10}^{\textbf {13}} cm ^{-\textbf {2}} to \textsf {5}\times \textsf {10}^{\textbf {14}} cm ^{-\textbf {2}} , would be consistent with the experiments and device simulations that exhibit an efficient suppression of electron injection. Metallization of the B-layers was studied, showing that in many situations, thinning of the layer to monolayer thickness will lead to a significant increase in the electron injection.

    Original languageEnglish
    Article number8686173
    Pages (from-to)858-861
    Number of pages4
    JournalIEEE electron device letters
    Volume40
    Issue number6
    Early online date11 Apr 2019
    DOIs
    Publication statusPublished - 1 Jun 2019

    Fingerprint

    Electron injection
    Boron
    Diodes
    Metals
    Monolayers
    Silicon
    Metallizing
    Chemical vapor deposition
    Experiments

    Keywords

    • Chemical-vapor deposition
    • electron injection
    • monolayer
    • photodiodes
    • pure boron
    • silicon
    • ultrashallow junctions

    Cite this

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    title = "Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes",
    abstract = "A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection as PureB diodes fabricated with a few nm-thick PureB layer deposited at 400 °C. Assuming high concentrations of acceptor states at the B-to-Si interface, induced by a fixed negative charge in the range from \textsf {5}\times \textsf {10}^{\textbf {13}} cm ^{-\textbf {2}} to \textsf {5}\times \textsf {10}^{\textbf {14}} cm ^{-\textbf {2}} , would be consistent with the experiments and device simulations that exhibit an efficient suppression of electron injection. Metallization of the B-layers was studied, showing that in many situations, thinning of the layer to monolayer thickness will lead to a significant increase in the electron injection.",
    keywords = "Chemical-vapor deposition, electron injection, monolayer, photodiodes, pure boron, silicon, ultrashallow junctions",
    author = "Tihomir Knezevic and Xingyu Liu and Erwin Hardeveld and Tomislav Suligoj and Nanver, {Lis K.}",
    year = "2019",
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    language = "English",
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    Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes. / Knezevic, Tihomir; Liu, Xingyu; Hardeveld, Erwin; Suligoj, Tomislav; Nanver, Lis K.

    In: IEEE electron device letters, Vol. 40, No. 6, 8686173, 01.06.2019, p. 858-861.

    Research output: Contribution to journalArticleAcademicpeer-review

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    AU - Liu, Xingyu

    AU - Hardeveld, Erwin

    AU - Suligoj, Tomislav

    AU - Nanver, Lis K.

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