Abstract
A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection as PureB diodes fabricated with a few nm-thick PureB layer deposited at 400 °C. Assuming high concentrations of acceptor states at the B-to-Si interface, induced by a fixed negative charge in the range from \textsf {5}\times \textsf {10}^{\textbf {13}} cm ^{-\textbf {2}} to \textsf {5}\times \textsf {10}^{\textbf {14}} cm ^{-\textbf {2}} , would be consistent with the experiments and device simulations that exhibit an efficient suppression of electron injection. Metallization of the B-layers was studied, showing that in many situations, thinning of the layer to monolayer thickness will lead to a significant increase in the electron injection.
Original language | English |
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Article number | 8686173 |
Pages (from-to) | 858-861 |
Number of pages | 4 |
Journal | IEEE electron device letters |
Volume | 40 |
Issue number | 6 |
Early online date | 11 Apr 2019 |
DOIs | |
Publication status | Published - 1 Jun 2019 |
Keywords
- Chemical-vapor deposition
- Electron injection
- Monolayer
- Photodiode
- Pure boron (PureB)
- Silicon
- Ultrashallow junctions
- 22/4 OA procedure