Liquid and back gate coupling effect: Toward biosensing with lowest detection limit

Sergii Pud; Jing Li; Volodymyr Sibiliev; Mykhaylo Petrychuk; Valery Kovalenko; Andreas Offenhäusser; Svetlana Vitusevich

doi:10.1021/nl403748x

Liquid and back gate coupling effect: Toward biosensing with lowest detection limit

Sergii Pud, Jing Li, Volodymyr Sibiliev, Mykhaylo Petrychuk, Valery Kovalenko, Andreas Offenhäusser, Svetlana Vitusevich^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

43 Citations (Scopus)

Abstract

We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimization of signal-to-noise ratio in subthreshold as well as above-threshold regimes. Increasing the sensitivity of Si NW FET sensors above the detection limit has been predicted and proven by direct experimental measurements.

Original language	English
Pages (from-to)	578-584
Number of pages	7
Journal	Nano letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1021/nl403748x
Publication status	Published - 12 Feb 2014
Externally published	Yes

Keywords

FET
gate coupling
liquid gate
noise spectroscopy
signal-to-noise ratio
Silicon nanowires

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10.1021/nl403748x

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abstract = "We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimization of signal-to-noise ratio in subthreshold as well as above-threshold regimes. Increasing the sensitivity of Si NW FET sensors above the detection limit has been predicted and proven by direct experimental measurements.",

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T2 - Toward biosensing with lowest detection limit

AU - Pud, Sergii

AU - Li, Jing

AU - Sibiliev, Volodymyr

AU - Petrychuk, Mykhaylo

AU - Kovalenko, Valery

AU - Offenhäusser, Andreas

AU - Vitusevich, Svetlana

PY - 2014/2/12

Y1 - 2014/2/12

N2 - We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimization of signal-to-noise ratio in subthreshold as well as above-threshold regimes. Increasing the sensitivity of Si NW FET sensors above the detection limit has been predicted and proven by direct experimental measurements.

AB - We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimization of signal-to-noise ratio in subthreshold as well as above-threshold regimes. Increasing the sensitivity of Si NW FET sensors above the detection limit has been predicted and proven by direct experimental measurements.

KW - FET

KW - gate coupling

KW - liquid gate

KW - noise spectroscopy

KW - signal-to-noise ratio

KW - Silicon nanowires

UR - http://www.scopus.com/inward/record.url?scp=84894196979&partnerID=8YFLogxK

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SP - 578

EP - 584

JO - Nano letters

JF - Nano letters

IS - 2

ER -

Liquid and back gate coupling effect: Toward biosensing with lowest detection limit

Abstract

Keywords

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