Liquid and back gate coupling effect: Toward biosensing with lowest detection limit

Sergii Pud, Jing Li, Volodymyr Sibiliev, Mykhaylo Petrychuk, Valery Kovalenko, Andreas Offenhäusser, Svetlana Vitusevich*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

34 Citations (Scopus)

Abstract

We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimization of signal-to-noise ratio in subthreshold as well as above-threshold regimes. Increasing the sensitivity of Si NW FET sensors above the detection limit has been predicted and proven by direct experimental measurements.

Original languageEnglish
Pages (from-to)578-584
Number of pages7
JournalNano letters
Volume14
Issue number2
DOIs
Publication statusPublished - 12 Feb 2014
Externally publishedYes

Keywords

  • FET
  • gate coupling
  • liquid gate
  • noise spectroscopy
  • signal-to-noise ratio
  • Silicon nanowires

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