Abstract
We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimization of signal-to-noise ratio in subthreshold as well as above-threshold regimes. Increasing the sensitivity of Si NW FET sensors above the detection limit has been predicted and proven by direct experimental measurements.
| Original language | English |
|---|---|
| Pages (from-to) | 578-584 |
| Number of pages | 7 |
| Journal | Nano letters |
| Volume | 14 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 12 Feb 2014 |
| Externally published | Yes |
Keywords
- FET
- gate coupling
- liquid gate
- noise spectroscopy
- signal-to-noise ratio
- Silicon nanowires
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