Lithography for now and the future

M. A. van de Kerkhof; J. P. H. Benschop; V. Y. Banine

doi:10.1016/j.sse.2019.03.006

Lithography for now and the future

M. A. van de Kerkhof, J. P. H. Benschop, V. Y. Banine

XUV Optics

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Abstract

Highlights
Amount of transistors on chip oubles every 1.5–2 years accordig to Moore’s law.
Multiple patterning is required to obtain ∼10–16 nm half-pitch using immersion lithography. EUV scanners will extend Moore’s Law for the foreseeable future.
View of further extension of EUV in the future will be discussed in this article.

Original language	English
Pages (from-to)	20-26
Journal	Solid-state electronics
Volume	155
Early online date	4 Mar 2019
DOIs	https://doi.org/10.1016/j.sse.2019.03.006
Publication status	Published - May 2019

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10.1016/j.sse.2019.03.006

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title = "Lithography for now and the future",

abstract = "Highlights Amount of transistors on chip oubles every 1.5–2 years accordig to Moore{\textquoteright}s law. Multiple patterning is required to obtain ∼10–16 nm half-pitch using immersion lithography. EUV scanners will extend Moore{\textquoteright}s Law for the foreseeable future. View of further extension of EUV in the future will be discussed in this article.",

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author = "\{van de Kerkhof\}, \{M. A.\} and Benschop, \{J. P. H.\} and Banine, \{V. Y.\}",

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T1 - Lithography for now and the future

AU - van de Kerkhof, M. A.

AU - Benschop, J. P. H.

AU - Banine, V. Y.

PY - 2019/5

Y1 - 2019/5

N2 - Highlights Amount of transistors on chip oubles every 1.5–2 years accordig to Moore’s law. Multiple patterning is required to obtain ∼10–16 nm half-pitch using immersion lithography. EUV scanners will extend Moore’s Law for the foreseeable future. View of further extension of EUV in the future will be discussed in this article.

AB - Highlights Amount of transistors on chip oubles every 1.5–2 years accordig to Moore’s law. Multiple patterning is required to obtain ∼10–16 nm half-pitch using immersion lithography. EUV scanners will extend Moore’s Law for the foreseeable future. View of further extension of EUV in the future will be discussed in this article.

KW - n/a OA procedure

U2 - 10.1016/j.sse.2019.03.006

DO - 10.1016/j.sse.2019.03.006

M3 - Article

SN - 0038-1101

VL - 155

SP - 20

EP - 26

JO - Solid-state electronics

JF - Solid-state electronics

ER -

Lithography for now and the future

Abstract

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