TY - JOUR
T1 - Load-mismatch sensitivity of class-E power amplifiers
AU - Ghahremani, Ali
AU - Annema, Anne-Johan
AU - Nauta, Bram
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Class-E RF power amplifiers (PAs) are very power efficient under nominal operating conditions. Due to incorporating two tuned tanks, the dependence on the load impedance is, however, relatively large, resulting in, e.g., load-dependent output power, power efficiency, peak voltages, and peak (and average) currents which can lead to reliability issues. This paper presents load-pull analyses for class-E RF PAs from a mathematical perspective, with analyses and discussions of the effects of the most common nonidealities of class-E PAs: the limited loaded quality factor (Qloaded) of the series filter, switch on-resistance, the limited quality factor of the dc-feed inductor, load mismatch-dependent switch conduction loss, and the limited negative voltage excursions (due to, e.g., the reverse conduction of the switch transistor for negative voltage excursions). The theoretical findings are backed up by extensive circuit simulations and load-pull measurements of a class-E PA implemented in 65-nm CMOS technology. The PA provides 18.1-dBm output power and 72% efficiency at 1.4 GHz under nominal operating condition employing an off-chip matching network.
AB - Class-E RF power amplifiers (PAs) are very power efficient under nominal operating conditions. Due to incorporating two tuned tanks, the dependence on the load impedance is, however, relatively large, resulting in, e.g., load-dependent output power, power efficiency, peak voltages, and peak (and average) currents which can lead to reliability issues. This paper presents load-pull analyses for class-E RF PAs from a mathematical perspective, with analyses and discussions of the effects of the most common nonidealities of class-E PAs: the limited loaded quality factor (Qloaded) of the series filter, switch on-resistance, the limited quality factor of the dc-feed inductor, load mismatch-dependent switch conduction loss, and the limited negative voltage excursions (due to, e.g., the reverse conduction of the switch transistor for negative voltage excursions). The theoretical findings are backed up by extensive circuit simulations and load-pull measurements of a class-E PA implemented in 65-nm CMOS technology. The PA provides 18.1-dBm output power and 72% efficiency at 1.4 GHz under nominal operating condition employing an off-chip matching network.
U2 - 10.1109/TMTT.2018.2873702
DO - 10.1109/TMTT.2018.2873702
M3 - Article
SN - 0018-9480
VL - 67
SP - 216
EP - 230
JO - IEEE transactions on microwave theory and techniques
JF - IEEE transactions on microwave theory and techniques
IS - 1
M1 - 8500354
ER -