Abstract
Original language | Undefined |
---|---|
Pages (from-to) | 382-385 |
Number of pages | 4 |
Journal | Journal of micromechanics and microengineering |
Volume | 11 |
Issue number | 4 |
DOIs | |
Publication status | Published - Jul 2001 |
Keywords
- METIS-200239
- EWI-12861
- IR-42032
Cite this
}
Local anodic bonding of Kovar to Pyrex aimed at high-pressure, solvent-resistant microfluidic connections. / Blom, M.T.; Chmela, E.; Gardeniers, Johannes G.E.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Tijssen, R.; van den Berg, Albert.
In: Journal of micromechanics and microengineering, Vol. 11, No. 4, 07.2001, p. 382-385.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Local anodic bonding of Kovar to Pyrex aimed at high-pressure, solvent-resistant microfluidic connections
AU - Blom, M.T.
AU - Chmela, E.
AU - Gardeniers, Johannes G.E.
AU - Berenschot, Johan W.
AU - Elwenspoek, Michael Curt
AU - Tijssen, R.
AU - van den Berg, Albert
PY - 2001/7
Y1 - 2001/7
N2 - Local anodic bonding of a common Kovar alloy to Pyrex is presented. This technique is ideally suitable for temperature-, solvent- and pressure-resistant microfluidic connections. In this paper we mainly concentrate on the stress problems occurring during and after bonding. Because of the different thermal expansion coefficients of Kovar and Pyrex a structure is added in order to release the thermal stresses induced during bonding. Optimum bonding conditions in vacuum on Pyrex and on a Pyrex-Si bonded wafer pair are investigated. In the latter case bonding for 3 h at 250 °C and 1.5 kV results in a high-quality bond.
AB - Local anodic bonding of a common Kovar alloy to Pyrex is presented. This technique is ideally suitable for temperature-, solvent- and pressure-resistant microfluidic connections. In this paper we mainly concentrate on the stress problems occurring during and after bonding. Because of the different thermal expansion coefficients of Kovar and Pyrex a structure is added in order to release the thermal stresses induced during bonding. Optimum bonding conditions in vacuum on Pyrex and on a Pyrex-Si bonded wafer pair are investigated. In the latter case bonding for 3 h at 250 °C and 1.5 kV results in a high-quality bond.
KW - METIS-200239
KW - EWI-12861
KW - IR-42032
U2 - 10.1088/0960-1317/11/4/317
DO - 10.1088/0960-1317/11/4/317
M3 - Article
VL - 11
SP - 382
EP - 385
JO - Journal of micromechanics and microengineering
JF - Journal of micromechanics and microengineering
SN - 0960-1317
IS - 4
ER -