Local Doping of Silicon Using Nanoimprint Lithography and Molecular Monolayers

W. Pim Voorthuijzen, M.D. Yilmaz, W.J.M. Naber, Jurriaan Huskens, Wilfred Gerard van der Wiel

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47 Citations (Scopus)
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Micrometer-scale monolayer patterns of a phosphorus-containing molecular precursor are fabricated on nearly intrinsic Si(100) using nanoimprint lithography. The patterned sample is protected by a SiO2capping layer applied by electron beam evaporation and subjected to rapid thermal annealing (RTA) to diffuse the phosphorus dopant atoms into the bulk silicon locally.
Original languageEnglish
Pages (from-to)1346-1350
Number of pages5
JournalAdvanced materials
Issue number11
Publication statusPublished - 9 Feb 2011


  • EWI-21089
  • Semiconductor doping
  • Patterning
  • IR-79196
  • Nanoimprint lithography
  • METIS-282161
  • molecular monolayers


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