Local Doping of Silicon Using Nanoimprint Lithography and Molecular Monolayers

W. Pim Voorthuijzen; M.D. Yilmaz; W.J.M. Naber; Jurriaan Huskens; Wilfred Gerard van der Wiel

doi:10.1002/adma.201003625

Local Doping of Silicon Using Nanoimprint Lithography and Molecular Monolayers

W. Pim Voorthuijzen, M.D. Yilmaz, W.J.M. Naber, Jurriaan Huskens, Wilfred Gerard van der Wiel

Molecular Nanofabrication

Research output: Contribution to journal › Article › Academic › peer-review

45 Citations (Scopus)

1 Downloads (Pure)

Abstract

Micrometer-scale monolayer patterns of a phosphorus-containing molecular precursor are fabricated on nearly intrinsic Si(100) using nanoimprint lithography. The patterned sample is protected by a SiO2capping layer applied by electron beam evaporation and subjected to rapid thermal annealing (RTA) to diffuse the phosphorus dopant atoms into the bulk silicon locally.

Original language	English
Pages (from-to)	1346-1350
Number of pages	5
Journal	Advanced materials
Volume	23
Issue number	11
DOIs	https://doi.org/10.1002/adma.201003625
Publication status	Published - 9 Feb 2011

Keywords

EWI-21089
Semiconductor doping
Patterning
IR-79196
Nanoimprint lithography
METIS-282161
molecular monolayers

Access to Document

10.1002/adma.201003625

http://eprints.eemcs.utwente.nl/secure2/21089/01/Local_doping_of_Silicon_Using_Nanoimprint_pdf.pdf

Cite this

@article{1e9c8cb4c9d8453ab40bce43028ba443,

title = "Local Doping of Silicon Using Nanoimprint Lithography and Molecular Monolayers",

abstract = "Micrometer-scale monolayer patterns of a phosphorus-containing molecular precursor are fabricated on nearly intrinsic Si(100) using nanoimprint lithography. The patterned sample is protected by a SiO2capping layer applied by electron beam evaporation and subjected to rapid thermal annealing (RTA) to diffuse the phosphorus dopant atoms into the bulk silicon locally.",

keywords = "EWI-21089, Semiconductor doping, Patterning, IR-79196, Nanoimprint lithography, METIS-282161, molecular monolayers",

author = "Voorthuijzen, {W. Pim} and M.D. Yilmaz and W.J.M. Naber and Jurriaan Huskens and {van der Wiel}, {Wilfred Gerard}",

year = "2011",

month = feb,

day = "9",

doi = "10.1002/adma.201003625",

language = "English",

volume = "23",

pages = "1346--1350",

journal = "Advanced materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "11",

}

TY - JOUR

T1 - Local Doping of Silicon Using Nanoimprint Lithography and Molecular Monolayers

AU - Voorthuijzen, W. Pim

AU - Yilmaz, M.D.

AU - Naber, W.J.M.

AU - Huskens, Jurriaan

AU - van der Wiel, Wilfred Gerard

PY - 2011/2/9

Y1 - 2011/2/9

N2 - Micrometer-scale monolayer patterns of a phosphorus-containing molecular precursor are fabricated on nearly intrinsic Si(100) using nanoimprint lithography. The patterned sample is protected by a SiO2capping layer applied by electron beam evaporation and subjected to rapid thermal annealing (RTA) to diffuse the phosphorus dopant atoms into the bulk silicon locally.

AB - Micrometer-scale monolayer patterns of a phosphorus-containing molecular precursor are fabricated on nearly intrinsic Si(100) using nanoimprint lithography. The patterned sample is protected by a SiO2capping layer applied by electron beam evaporation and subjected to rapid thermal annealing (RTA) to diffuse the phosphorus dopant atoms into the bulk silicon locally.

KW - EWI-21089

KW - Semiconductor doping

KW - Patterning

KW - IR-79196

KW - Nanoimprint lithography

KW - METIS-282161

KW - molecular monolayers

U2 - 10.1002/adma.201003625

DO - 10.1002/adma.201003625

M3 - Article

VL - 23

SP - 1346

EP - 1350

JO - Advanced materials

JF - Advanced materials

SN - 0935-9648

IS - 11

ER -

Local Doping of Silicon Using Nanoimprint Lithography and Molecular Monolayers

Abstract

Keywords

Access to Document

Fingerprint

Cite this