Micrometer-scale monolayer patterns of a phosphorus-containing molecular precursor are fabricated on nearly intrinsic Si(100) using nanoimprint lithography. The patterned sample is protected by a SiO2capping layer applied by electron beam evaporation and subjected to rapid thermal annealing (RTA) to diffuse the phosphorus dopant atoms into the bulk silicon locally.
|Number of pages||5|
|Publication status||Published - 9 Feb 2011|
- Semiconductor doping
- Nanoimprint lithography
- molecular monolayers