Abstract
Micrometer-scale monolayer patterns of a phosphorus-containing molecular precursor are fabricated on nearly intrinsic Si(100) using nanoimprint lithography. The patterned sample is protected by a SiO2capping layer applied by electron beam evaporation and subjected to rapid thermal annealing (RTA) to diffuse the phosphorus dopant atoms into the bulk silicon locally.
| Original language | English |
|---|---|
| Pages (from-to) | 1346-1350 |
| Number of pages | 5 |
| Journal | Advanced materials |
| Volume | 23 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 9 Feb 2011 |
Keywords
- EWI-21089
- Semiconductor doping
- Patterning
- IR-79196
- Nanoimprint lithography
- METIS-282161
- molecular monolayers
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