Localized Heating and Switching in MoTe2 -Based Resistive Memory Devices

Isha Datye, Miguel Muñoz Rojo, Eilam Yalon, Sanchit Deshmukh, Michael Mleczko, Eric Pop*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Abstract

Two-dimensional (2D) materials have recently been incorporated into resistive memory devices due to their atomically thin nature, but their switching mechanism is not yet well understood. Here we study bipolar switching in MoTe2-based resistive memory of varying thickness and electrode area. Using scanning thermal microscopy (SThM), we map the surface temperature of the devices under bias, revealing clear evidence of localized heating at conductive “plugs” formed during switching. The SThM measurements are correlated to electro-thermal simulations, yielding a range of plug diameters (250 to 350 nm) and temperatures at constant bias and during switching. Transmission electron microscopy images reveal these plugs result from atomic migration between electrodes, which is a thermally-activated process. However, the initial forming may be caused by defect generation or Te migration within the MoTe2. This study provides the first thermal and localized switching insights into the operation of such resistive memory, and demonstrates a thermal microscopy technique that can be applied to a wide variety of traditional and emerging memory devices.
Original languageEnglish
Pages (from-to)1461-1467
Number of pages7
JournalNano letters
Volume20
Issue number2
Early online date17 Jan 2020
DOIs
Publication statusPublished - 12 Feb 2020

Keywords

  • UT-Hybrid-D

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