Localized heating in Mo'I'ei-Based resistive memory devices

Isha M. Datye, Miguel Munoz Rojo, Eilam Yalon, Michal J. Mleczko, Eric Pop

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Abstract

Layered materials like transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) have been recently demonstrated as the switching layers in resistive random access memory (RRAM) devices [1]-[3], but their switching mechanisms are not yet well understood. In this work, we show resistive memory switching in MoTe2 devices and investigate the thermal origins of their switching behavior using scanning thermal microscopy (SThM). We observe localized heating due to the formation of a conductive plug, which is correlated with electro-thermal simulations, providing the first thermal insights into the operation of such RRAM devices.

Original languageEnglish
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherIEEE
ISBN (Electronic)978-1-5386-3028-0
DOIs
Publication statusPublished - 20 Aug 2018
Externally publishedYes
Event76th Device Research Conference, DRC 2018 - University of California, Santa Barbara, Santa Barbara, United States
Duration: 24 Jun 201827 Jun 2018
Conference number: 76
https://www.mrs.org/drc-2018

Conference

Conference76th Device Research Conference, DRC 2018
Abbreviated titleDRC 2018
CountryUnited States
CitySanta Barbara
Period24/06/1827/06/18
Internet address

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    Datye, I. M., Rojo, M. M., Yalon, E., Mleczko, M. J., & Pop, E. (2018). Localized heating in Mo'I'ei-Based resistive memory devices. In 2018 76th Device Research Conference, DRC 2018 [8442153] IEEE. https://doi.org/10.1109/DRC.2018.8442153