Localized heating in Mo'I'ei-Based resistive memory devices

Isha M. Datye; Miguel Munoz Rojo; Eilam Yalon; Michal J. Mleczko; Eric Pop

doi:10.1109/DRC.2018.8442153

Localized heating in Mo'I'ei-Based resistive memory devices

Isha M. Datye, Miguel Munoz Rojo, Eilam Yalon, Michal J. Mleczko, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Layered materials like transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) have been recently demonstrated as the switching layers in resistive random access memory (RRAM) devices [1]-[3], but their switching mechanisms are not yet well understood. In this work, we show resistive memory switching in MoTe2 devices and investigate the thermal origins of their switching behavior using scanning thermal microscopy (SThM). We observe localized heating due to the formation of a conductive plug, which is correlated with electro-thermal simulations, providing the first thermal insights into the operation of such RRAM devices.

Original language	English
Title of host publication	2018 76th Device Research Conference, DRC 2018
Publisher	IEEE
ISBN (Electronic)	978-1-5386-3028-0
DOIs	https://doi.org/10.1109/DRC.2018.8442153
Publication status	Published - 20 Aug 2018
Externally published	Yes
Event	76th Device Research Conference, DRC 2018 - University of California, Santa Barbara, Santa Barbara, United States Duration: 24 Jun 2018 → 27 Jun 2018 Conference number: 76 https://www.mrs.org/drc-2018

Conference

Conference	76th Device Research Conference, DRC 2018
Abbreviated title	DRC 2018
Country/Territory	United States
City	Santa Barbara
Period	24/06/18 → 27/06/18
Internet address	https://www.mrs.org/drc-2018

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10.1109/DRC.2018.8442153

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@inproceedings{148e7692acc74d0fa2f30187f0d25759,

title = "Localized heating in Mo'I'ei-Based resistive memory devices",

abstract = "Layered materials like transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) have been recently demonstrated as the switching layers in resistive random access memory (RRAM) devices [1]-[3], but their switching mechanisms are not yet well understood. In this work, we show resistive memory switching in MoTe2 devices and investigate the thermal origins of their switching behavior using scanning thermal microscopy (SThM). We observe localized heating due to the formation of a conductive plug, which is correlated with electro-thermal simulations, providing the first thermal insights into the operation of such RRAM devices.",

author = "Datye, {Isha M.} and Rojo, {Miguel Munoz} and Eilam Yalon and Mleczko, {Michal J.} and Eric Pop",

year = "2018",

month = aug,

day = "20",

doi = "10.1109/DRC.2018.8442153",

language = "English",

booktitle = "2018 76th Device Research Conference, DRC 2018",

publisher = "IEEE",

address = "United States",

note = "76th Device Research Conference, DRC 2018, DRC 2018 ; Conference date: 24-06-2018 Through 27-06-2018",

url = "https://www.mrs.org/drc-2018",

}

TY - GEN

T1 - Localized heating in Mo'I'ei-Based resistive memory devices

AU - Datye, Isha M.

AU - Rojo, Miguel Munoz

AU - Yalon, Eilam

AU - Mleczko, Michal J.

AU - Pop, Eric

N1 - Conference code: 76

PY - 2018/8/20

Y1 - 2018/8/20

N2 - Layered materials like transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) have been recently demonstrated as the switching layers in resistive random access memory (RRAM) devices [1]-[3], but their switching mechanisms are not yet well understood. In this work, we show resistive memory switching in MoTe2 devices and investigate the thermal origins of their switching behavior using scanning thermal microscopy (SThM). We observe localized heating due to the formation of a conductive plug, which is correlated with electro-thermal simulations, providing the first thermal insights into the operation of such RRAM devices.

AB - Layered materials like transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) have been recently demonstrated as the switching layers in resistive random access memory (RRAM) devices [1]-[3], but their switching mechanisms are not yet well understood. In this work, we show resistive memory switching in MoTe2 devices and investigate the thermal origins of their switching behavior using scanning thermal microscopy (SThM). We observe localized heating due to the formation of a conductive plug, which is correlated with electro-thermal simulations, providing the first thermal insights into the operation of such RRAM devices.

UR - http://www.scopus.com/inward/record.url?scp=85053200579&partnerID=8YFLogxK

U2 - 10.1109/DRC.2018.8442153

DO - 10.1109/DRC.2018.8442153

M3 - Conference contribution

AN - SCOPUS:85053200579

BT - 2018 76th Device Research Conference, DRC 2018

PB - IEEE

T2 - 76th Device Research Conference, DRC 2018

Y2 - 24 June 2018 through 27 June 2018

ER -

Localized heating in Mo'I'ei-Based resistive memory devices

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