Long-Range Domain Structure and Symmetry Engineering by Interfacial Oxygen Octahedral Coupling at Heterostructure Interface

Zhaoliang Liao, R.J. Green, N. Gauquelin, S. Macke, Lin Li, J. Gonnissen, R. Sutarto, Evert Pieter Houwman, Z. Zhong, S. van Aert, J. Verbeeck, G.A. Sawatzky, Mark Huijben, Gertjan Koster, Augustinus J.H.M. Rijnders

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

Abstract

In epitaxial thin film systems, the crystal structure and its symmetry deviate from the bulk counterpart due to various mechanisms such as epitaxial strain and interfacial structural coupling, which is accompanyed by a change in their properties. In perovskite materials, the crystal symmetry can be described by rotations of sixfold coordinated transition metal oxygen octahedra, which are found to be altered at interfaces. Here, it is unraveled how the local oxygen octahedral coupling at perovskite heterostructural interfaces strongly influences the domain structure and symmetry of the epitaxial films resulting in design rules to induce various structures in thin films using carefully selected combinations of substrate/buffer/film. Very interestingly it is discovered that these combinations lead to structure changes throughout the full thickness of the film. The results provide a deep insight into understanding the origin of induced structures in a perovskite heterostructure and an intelligent route to achieve unique functional properties.
Original languageEnglish
Pages (from-to)6627-6634
Number of pages8
JournalAdvanced functional materials
Volume26
DOIs
Publication statusPublished - 2016

Keywords

  • IR-100754
  • METIS-317029

Fingerprint Dive into the research topics of 'Long-Range Domain Structure and Symmetry Engineering by Interfacial Oxygen Octahedral Coupling at Heterostructure Interface'. Together they form a unique fingerprint.

  • Cite this