Low carrier concentration crystals of the topological insulator Bi2-xSbxTe3-ySey: a magnetotransport study

Y. Pan, D. Wu, J.R. Angevaare, H. Luigjes, E. Frantzeskakis, N. de Jong, E. van Heumen, T.V. Bay, B. Zwartsenberg, Y. Huang, M. Snelder, A. Brinkman, M.S. Golden, A. de Visser

Research output: Contribution to journalArticleAcademicpeer-review

30 Citations (Scopus)
42 Downloads (Pure)

Abstract

In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)2(Te,Se)3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B 84 165311). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μm. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states.
Original languageEnglish
Article number123035
Number of pages15
JournalNew journal of physics
Volume16
DOIs
Publication statusPublished - 2014

Fingerprint

insulators
electrical resistivity
resistors
crystals
Hall effect
single crystals

Keywords

  • METIS-309403
  • IR-94525

Cite this

Pan, Y., Wu, D., Angevaare, J. R., Luigjes, H., Frantzeskakis, E., de Jong, N., ... de Visser, A. (2014). Low carrier concentration crystals of the topological insulator Bi2-xSbxTe3-ySey: a magnetotransport study. New journal of physics, 16, [123035]. https://doi.org/10.1088/1367-2630/16/12/123035
Pan, Y. ; Wu, D. ; Angevaare, J.R. ; Luigjes, H. ; Frantzeskakis, E. ; de Jong, N. ; van Heumen, E. ; Bay, T.V. ; Zwartsenberg, B. ; Huang, Y. ; Snelder, M. ; Brinkman, A. ; Golden, M.S. ; de Visser, A. / Low carrier concentration crystals of the topological insulator Bi2-xSbxTe3-ySey : a magnetotransport study. In: New journal of physics. 2014 ; Vol. 16.
@article{77f45ff7336a40779d5c6fc54b852c77,
title = "Low carrier concentration crystals of the topological insulator Bi2-xSbxTe3-ySey: a magnetotransport study",
abstract = "In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)2(Te,Se)3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B 84 165311). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97{\%} when the sample thickness is reduced to 1 μm. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states.",
keywords = "METIS-309403, IR-94525",
author = "Y. Pan and D. Wu and J.R. Angevaare and H. Luigjes and E. Frantzeskakis and {de Jong}, N. and {van Heumen}, E. and T.V. Bay and B. Zwartsenberg and Y. Huang and M. Snelder and A. Brinkman and M.S. Golden and {de Visser}, A.",
year = "2014",
doi = "10.1088/1367-2630/16/12/123035",
language = "English",
volume = "16",
journal = "New journal of physics",
issn = "1367-2630",
publisher = "IOP Publishing Ltd.",

}

Pan, Y, Wu, D, Angevaare, JR, Luigjes, H, Frantzeskakis, E, de Jong, N, van Heumen, E, Bay, TV, Zwartsenberg, B, Huang, Y, Snelder, M, Brinkman, A, Golden, MS & de Visser, A 2014, 'Low carrier concentration crystals of the topological insulator Bi2-xSbxTe3-ySey: a magnetotransport study' New journal of physics, vol. 16, 123035. https://doi.org/10.1088/1367-2630/16/12/123035

Low carrier concentration crystals of the topological insulator Bi2-xSbxTe3-ySey : a magnetotransport study. / Pan, Y.; Wu, D.; Angevaare, J.R.; Luigjes, H.; Frantzeskakis, E.; de Jong, N.; van Heumen, E.; Bay, T.V.; Zwartsenberg, B.; Huang, Y.; Snelder, M.; Brinkman, A.; Golden, M.S.; de Visser, A.

In: New journal of physics, Vol. 16, 123035, 2014.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Low carrier concentration crystals of the topological insulator Bi2-xSbxTe3-ySey

T2 - a magnetotransport study

AU - Pan, Y.

AU - Wu, D.

AU - Angevaare, J.R.

AU - Luigjes, H.

AU - Frantzeskakis, E.

AU - de Jong, N.

AU - van Heumen, E.

AU - Bay, T.V.

AU - Zwartsenberg, B.

AU - Huang, Y.

AU - Snelder, M.

AU - Brinkman, A.

AU - Golden, M.S.

AU - de Visser, A.

PY - 2014

Y1 - 2014

N2 - In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)2(Te,Se)3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B 84 165311). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μm. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states.

AB - In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)2(Te,Se)3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B 84 165311). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μm. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states.

KW - METIS-309403

KW - IR-94525

U2 - 10.1088/1367-2630/16/12/123035

DO - 10.1088/1367-2630/16/12/123035

M3 - Article

VL - 16

JO - New journal of physics

JF - New journal of physics

SN - 1367-2630

M1 - 123035

ER -