Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Cleber Biasotto*, Viktor Gonda, Lis K. Nanver, Tom L.M. Scholtes, Johan Van Der Cingel, Daniel Vidal, Vladimir Jovanović

*Corresponding author for this work

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Good-quality ultrashallow n +p junctions are formed using 5-keV amorphizing As + implantations followed by a single-shot excimer laser anneal for dopant activation. By using an implant that is self-aligned to the contact windows etched in an oxide isolation layer, straightforward processing of the diodes is achieved with postimplantation processing temperatures kept below 400°C. A possible source of junction leakage at the perimeter caused by dip-etch enlargement of the contact window, also confirmed by transmission electron microscopy (TEM) analysis, is identified, and diode performance is improved by increasing the junction/contact window overlap. The optimum performance in terms of low leakage, shallow junctions, and low resistivity is achieved for 30°tilted implants and by applying a thin laser-reflective aluminum layer. This work isolates the minimum requirements for achieving low-leakage diode characteristics.

Original languageEnglish
Pages (from-to)2187-2196
Number of pages10
JournalJournal of electronic materials
Issue number11
Publication statusPublished - 1 Nov 2011
Externally publishedYes


  • Excimer laser annealing
  • Low-temperature processing
  • Reflective masking layer
  • Tilted implantations
  • Ultrashallow junctions

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