TY - JOUR
T1 - Low Damage Scalable Pulsed Laser Deposition of SnO2 for p–i–n Perovskite Solar Cells
AU - Soltanpoor, Wiria
AU - Bracesco, Andrea E.A.
AU - Rodkey, Nathan
AU - Creatore, Mariadriana
AU - Morales-Masis, Monica
N1 - Funding Information:
W.S. and A.B. contributed equally to this work. W.S. and M.M.M. acknowledge the funding by the European Research Council (ERC) under the European Union's Horizon 2020 Research and Innovation Program (CREATE, Grant Agreement No. 852722). A.E.A.B. and M.C. thank Cristian A. A. van Helvoirt, Caspar O. van Bommel, and Janneke J. A. Zeebregts for their technical support. A.E.A.B. acknowledges funding from the NWO Joint Solar Program III (JSP3). M.C. acknowledges the NWO Aspasia Program. The authors thank Klaas Bakker and TNO (partner in Solliance, Eindhoven) for the technical support, and access to their facilities, while performing the and EQE measurements. A.E.A.B. and M.C. also thank Sjoerd Veenstra and Valerio Zardetto, TNO (partner in Solliance, Eindhoven) for initial discussions. The authors thank Denise Kreugel from Eindhoven University of Technology (TU/e) for preliminary investigations. J–V
Publisher Copyright:
© 2023 The Authors. Solar RRL published by Wiley-VCH GmbH.
PY - 2023/12
Y1 - 2023/12
N2 - Pulsed laser deposition (PLD) has already been adopted as a low damage deposition technique of transparent conducting oxides on top of sensitive organic charge transport layers in optoelectronic devices. Herein, SnO2 deposition is demonstrated as buffer layer in p–i–n perovskite solar cells (PSCs) via wafer-scale (4 inch) PLD at room temperature. The PLD SnO2 properties, its interface with perovskite/C60, and device performance are compared to atomic layer deposited (ALD) SnO2, i.e., state-of-the-art buffer layer in perovskite-based single junction and tandem photovoltaics. The PLD SnO2-based solar cells exhibit on par efficiencies (17.8%) with that of SnO2 fabricated using ALD. The solvent-free room temperature processing and wafer-scale approach of PLD open up possibilities for buffer layer formation with increased deposition rates while mitigating potential thermal or physical damage to the top organic layers. This is a promising outlook for fully physical vapor-processed halide PSCs and optoelectronic devices requiring low thermal budget.
AB - Pulsed laser deposition (PLD) has already been adopted as a low damage deposition technique of transparent conducting oxides on top of sensitive organic charge transport layers in optoelectronic devices. Herein, SnO2 deposition is demonstrated as buffer layer in p–i–n perovskite solar cells (PSCs) via wafer-scale (4 inch) PLD at room temperature. The PLD SnO2 properties, its interface with perovskite/C60, and device performance are compared to atomic layer deposited (ALD) SnO2, i.e., state-of-the-art buffer layer in perovskite-based single junction and tandem photovoltaics. The PLD SnO2-based solar cells exhibit on par efficiencies (17.8%) with that of SnO2 fabricated using ALD. The solvent-free room temperature processing and wafer-scale approach of PLD open up possibilities for buffer layer formation with increased deposition rates while mitigating potential thermal or physical damage to the top organic layers. This is a promising outlook for fully physical vapor-processed halide PSCs and optoelectronic devices requiring low thermal budget.
KW - atomic layer deposition
KW - buffer layers
KW - low damage
KW - perovskite solar cells
KW - pulsed laser deposition
KW - room temperature processing
KW - SnO
KW - UT-Hybrid-D
UR - http://www.scopus.com/inward/record.url?scp=85174208899&partnerID=8YFLogxK
U2 - 10.1002/solr.202300616
DO - 10.1002/solr.202300616
M3 - Article
AN - SCOPUS:85174208899
SN - 0038-092X
VL - 7
JO - Solar RRL
JF - Solar RRL
IS - 23
M1 - 2300616
ER -
