Low energy ion bombardment on e-Ge surfaces

J. Dekker; Henricus J.W. Zandvliet; Arend van Silfhout

doi:10.1016/0042-207X(90)94056-V

Low energy ion bombardment on e-Ge surfaces

J. Dekker, Henricus J.W. Zandvliet, Arend van Silfhout

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Abstract

Amorphous germanium thin films (25–60 Å) were prepared by low energy (500, 800 eV) bombardment of noble gas ions (Ne, Ar, Kr) on c-Ge(001). The films were examined by spectroscopic ellipsometry and analysed using linear regression analysis (LRA). The most probable composition of the damaged toplayer is that of void free amorphous germanium, comparable with those obtained by dc-magnetron sputtering. The results are in excellent agreement with Monte Carlo simulations of the transport of ions in matter (TRIM86).

Original language	Undefined
Pages (from-to)	1690-1691
Number of pages	2
Journal	Vacuum
Volume	41
Issue number	7-9
DOIs	https://doi.org/10.1016/0042-207X(90)94056-V
Publication status	Published - 1990

Keywords

METIS-128856
IR-72672

Access to Document

10.1016/0042-207X(90)94056-V

Dekker90low

Cite this

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title = "Low energy ion bombardment on e-Ge surfaces",

abstract = "Amorphous germanium thin films (25–60 {\AA}) were prepared by low energy (500, 800 eV) bombardment of noble gas ions (Ne, Ar, Kr) on c-Ge(001). The films were examined by spectroscopic ellipsometry and analysed using linear regression analysis (LRA). The most probable composition of the damaged toplayer is that of void free amorphous germanium, comparable with those obtained by dc-magnetron sputtering. The results are in excellent agreement with Monte Carlo simulations of the transport of ions in matter (TRIM86).",

keywords = "METIS-128856, IR-72672",

author = "J. Dekker and Zandvliet, {Henricus J.W.} and {van Silfhout}, Arend",

year = "1990",

doi = "10.1016/0042-207X(90)94056-V",

language = "Undefined",

volume = "41",

pages = "1690--1691",

journal = "Vacuum",

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TY - JOUR

T1 - Low energy ion bombardment on e-Ge surfaces

AU - Dekker, J.

AU - Zandvliet, Henricus J.W.

AU - van Silfhout, Arend

PY - 1990

Y1 - 1990

N2 - Amorphous germanium thin films (25–60 Å) were prepared by low energy (500, 800 eV) bombardment of noble gas ions (Ne, Ar, Kr) on c-Ge(001). The films were examined by spectroscopic ellipsometry and analysed using linear regression analysis (LRA). The most probable composition of the damaged toplayer is that of void free amorphous germanium, comparable with those obtained by dc-magnetron sputtering. The results are in excellent agreement with Monte Carlo simulations of the transport of ions in matter (TRIM86).

AB - Amorphous germanium thin films (25–60 Å) were prepared by low energy (500, 800 eV) bombardment of noble gas ions (Ne, Ar, Kr) on c-Ge(001). The films were examined by spectroscopic ellipsometry and analysed using linear regression analysis (LRA). The most probable composition of the damaged toplayer is that of void free amorphous germanium, comparable with those obtained by dc-magnetron sputtering. The results are in excellent agreement with Monte Carlo simulations of the transport of ions in matter (TRIM86).

KW - METIS-128856

KW - IR-72672

U2 - 10.1016/0042-207X(90)94056-V

DO - 10.1016/0042-207X(90)94056-V

M3 - Article

SN - 0042-207X

VL - 41

SP - 1690

EP - 1691

JO - Vacuum

JF - Vacuum

IS - 7-9

ER -