Low energy ion bombardment on e-Ge surfaces

J. Dekker, Henricus J.W. Zandvliet, Arend van Silfhout

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Abstract

Amorphous germanium thin films (25–60 Å) were prepared by low energy (500, 800 eV) bombardment of noble gas ions (Ne, Ar, Kr) on c-Ge(001). The films were examined by spectroscopic ellipsometry and analysed using linear regression analysis (LRA). The most probable composition of the damaged toplayer is that of void free amorphous germanium, comparable with those obtained by dc-magnetron sputtering. The results are in excellent agreement with Monte Carlo simulations of the transport of ions in matter (TRIM86).
Original languageUndefined
Pages (from-to)1690-1691
Number of pages2
JournalVacuum
Volume41
Issue number7-9
DOIs
Publication statusPublished - 1990

Keywords

  • METIS-128856
  • IR-72672

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