Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature

P.S. Anil Kumar; R. Jansen; O.M.J. van 't Erve; R. Vlutters; P. de Haan; J.C. Lodder

doi:10.1016/S0304-8853(00)00052-4

Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature

P.S. Anil Kumar, R. Jansen, O.M.J. van 't Erve, R. Vlutters, P. de Haan, J.C. Lodder

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Abstract

A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The SVT is a ferromagnet-semiconductor hybrid structure in which hot electrons are injected into a NiFe/Au/Co spin valve, and collected on the other side with energy and momentum selection. This makes the collector current extremely sensitive to spin-dependent scattering. The hot-electron current output of the device changes by more than a factor of three in magnetic fields of only a few Oe, corresponding to a magnetocurrent above 200% at room temperature.

Original language	English
Pages (from-to)	L1-L6
Number of pages	6
Journal	Journal of magnetism and magnetic materials
Volume	214
Issue number	1-2
DOIs	https://doi.org/10.1016/S0304-8853(00)00052-4
Publication status	Published - 2000

Keywords

SMI-NE: From 2006 in EWI-NE
Magnetotransport
Spin valve
Schottky barrier
Hot electron

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10.1016/S0304-8853(00)00052-4

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title = "Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature",

abstract = "A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The SVT is a ferromagnet-semiconductor hybrid structure in which hot electrons are injected into a NiFe/Au/Co spin valve, and collected on the other side with energy and momentum selection. This makes the collector current extremely sensitive to spin-dependent scattering. The hot-electron current output of the device changes by more than a factor of three in magnetic fields of only a few Oe, corresponding to a magnetocurrent above 200% at room temperature.",

keywords = "SMI-NE: From 2006 in EWI-NE, Magnetotransport, Spin valve, Schottky barrier, Hot electron",

author = "{Anil Kumar}, P.S. and R. Jansen and {van 't Erve}, O.M.J. and R. Vlutters and {de Haan}, P. and J.C. Lodder",

year = "2000",

doi = "10.1016/S0304-8853(00)00052-4",

language = "English",

volume = "214",

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TY - JOUR

T1 - Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature

AU - Anil Kumar, P.S.

AU - Jansen, R.

AU - van 't Erve, O.M.J.

AU - Vlutters, R.

AU - de Haan, P.

AU - Lodder, J.C.

PY - 2000

Y1 - 2000

N2 - A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The SVT is a ferromagnet-semiconductor hybrid structure in which hot electrons are injected into a NiFe/Au/Co spin valve, and collected on the other side with energy and momentum selection. This makes the collector current extremely sensitive to spin-dependent scattering. The hot-electron current output of the device changes by more than a factor of three in magnetic fields of only a few Oe, corresponding to a magnetocurrent above 200% at room temperature.

AB - A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The SVT is a ferromagnet-semiconductor hybrid structure in which hot electrons are injected into a NiFe/Au/Co spin valve, and collected on the other side with energy and momentum selection. This makes the collector current extremely sensitive to spin-dependent scattering. The hot-electron current output of the device changes by more than a factor of three in magnetic fields of only a few Oe, corresponding to a magnetocurrent above 200% at room temperature.

KW - SMI-NE: From 2006 in EWI-NE

KW - Magnetotransport

KW - Spin valve

KW - Schottky barrier

KW - Hot electron

U2 - 10.1016/S0304-8853(00)00052-4

DO - 10.1016/S0304-8853(00)00052-4

M3 - Article

SN - 0304-8853

VL - 214

SP - L1-L6

JO - Journal of magnetism and magnetic materials

JF - Journal of magnetism and magnetic materials

IS - 1-2

ER -

Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature

Abstract

Keywords

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