Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature

P.S. Anil Kumar, R. Jansen, O.M.J. van 't Erve, R. Vlutters, P. de Haan, J.C. Lodder

    Research output: Contribution to journalArticleAcademicpeer-review

    24 Citations (Scopus)

    Abstract

    A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The SVT is a ferromagnet-semiconductor hybrid structure in which hot electrons are injected into a NiFe/Au/Co spin valve, and collected on the other side with energy and momentum selection. This makes the collector current extremely sensitive to spin-dependent scattering. The hot-electron current output of the device changes by more than a factor of three in magnetic fields of only a few Oe, corresponding to a magnetocurrent above 200% at room temperature.
    Original languageEnglish
    Pages (from-to)L1-L6
    Number of pages6
    JournalJournal of magnetism and magnetic materials
    Volume214
    Issue number1-2
    DOIs
    Publication statusPublished - 2000

    Keywords

    • SMI-NE: From 2006 in EWI-NE
    • Magnetotransport
    • Spin valve
    • Schottky barrier
    • Hot electron

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